Abstract
BiFe1−x Zn x O3 thin films (x=0, 0.05, 0.1, 0.2, and 0.3) were prepared on LaNiO3 buffered surface oxidized Si substrates using pulsed laser deposition. The effect of Zn dopants on the structural, electrical, magnetic properties, and exchange bias on NiFe layers for BiFeO3 thin films has been systematically investigated. X ray diffraction and Raman spectra show that BiFe1−x Zn x O3 thin films have polycrystalline rhombohedral structure with Zn concentration smaller than 5 %, and a large amount of the impurity phase of Bi2Fe4O9 with further increasing Zn concentration above 10 %. With 5 % Zn doping in BiFeO3, the film quality is improved with larger grain size, better ferroelectricity, and larger magnetization. The exchange bias of BiFe1−x Zn x O3 on a 3.6 nm thick NiFe layer drastically decreases with increasing Zn doping concentration, and totally disappears with the Zn concentration larger than 10 %, indicating that the canted antiferromagnetic spin structure of BiFeO3 was suppressed with increasing the Zn doping concentration.
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Acknowledgements
This work is supported by the National Key Projects for Basic Researches of China (2010CB923404), the National Natural Science Foundation of China (51172044), the National Science Foundation of Jiangsu Province of China (BK2011617), by NCET-09-0296, the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, and Southeast University (the Excellent Young Teachers Program and Seujq201106).
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Sheng, Y., Yuan, X. & Xu, Q. The Multiferroic Properties of Zn Doped BiFeO3 Thin Films. J Supercond Nov Magn 26, 2785–2789 (2013). https://doi.org/10.1007/s10948-013-2111-x
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DOI: https://doi.org/10.1007/s10948-013-2111-x