Abstract
The planar Hall effect (PHE) has been studied in short period (Ga, Mn)As/GaAs superlattices displaying a ferromagnetic interlayer coupling between the magnetic layers. Complex dependence of the PHE on applied magnetic field is explained by taking into account the magnetocrystalline anisotropy of the (Ga, Mn)As layers, which results from biaxial compressive strain in the layers epitaxially grown on GaAs. Two-state behavior of the planar Hall resistance at zero magnetic field provides its usefulness for applications in nonvolatile memory devices. In addition, using an appropriate sequence of applied magnetic fields four different states of the planar Hall resistance, suitable for quaternary memory devices, can be realized owing to the formation of a stable multidomain structure in the Hall bar.
Similar content being viewed by others
References
Kirby, B.J., Borchers, J.A., Liu, X., Ge, Z., Cho, Y.J., Dobrowolska, M., Furdyna, J.K.: J. Appl. Phys. 103, 07D116 (2008)
Mack, S., Myers, R.C., Heron, J.T., Gossard, A.C., Awschalom, D.D.: Appl. Phys. Lett. 92, 192502 (2008)
Dietl, T., Ohno, H., Matsukura, F.: Phys. Rev. B 63, 195205 (2001)
Sawicki, M., Wang, K.-Y., Edmonds, K.W., Campion, R.P., Staddon, C.R., Farley, N.R.S., Foxon, C.T., Papis, E., Kamińska, E., Piotrowska, A., Dietl, T., Gallagher, B.L.: Phys. Rev. B 71, 121302(R) (2005)
Goldberg, C., Davis, R.E.: Phys. Rev. 94, 1121 (1954)
McGuire, T.R., Potter, R.I.: IEEE Trans. Magn. 11, 1018 (1975)
Tang, H.X., Kawakami, R.K., Awschalom, D.D., Roukes, M.L.: Phys. Rev. Lett. 90, 107201 (2003)
Wesela, W., Wosinski, T., Makosa, A., Figielski, T., Sadowski, J., Terki, F., Charar, S.: Acta Phys. Pol. A 112, 369 (2007)
Sadowski, J., Mathieu, R., Svedlindh, P., Karlsteen, M., Kanski, J., Fu, Y., Domagala, J.Z., Szuszkiewicz, W., Hennion, B., Maude, D.K., Airey, R., Hill, G.: Thin Solid Films 412, 122 (2002)
Szuszkiewicz, W., Dynowska, E., Hennion, B., Ott, F., Jouanne, M., Morhange, J.F., Karlsteen, M., Sadowski, J.: Acta Phys. Pol. A 100, 335 (2001)
Potashnik, S.J., Ku, K.C., Wang, R.F., Stone, M.B., Samarth, N., Schiffer, P., Chun, S.H.: J. Appl. Phys. 93, 6784 (2003)
Shin, D.Y., Chung, S.J., Lee, S., Liu, X., Furdyna, J.K.: Phys. Rev. Lett. 98, 047201 (2007)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Wosinski, T., Wesela, W., Makosa, A. et al. Memory Behavior of the Planar Hall Effect in Ferromagnetic (Ga, Mn)As/GaAs Superlattices. J Supercond Nov Magn 23, 83–86 (2010). https://doi.org/10.1007/s10948-009-0567-5
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10948-009-0567-5