Abstract
We report the magnetic and magnetotransport properties of Ga1−x Mn x Sb crystals grown with different Mn doping concentrations (x=0.01, 0.02, 0.03 and 0.04) by the horizontal Bridgman technique. A systematic reduction in lattice parameter with increase in Mn concentration is observed through X-ray diffraction studies. The crystals show negative magnetoresistance and anomalous Hall effect below 10 K. Anomalous Hall coefficient is negative and decreases with increasing Mn concentration. Temperature dependence on magnetization measurement shows a magnetic ordering below 10 K which could arise from GaMnSb alloy formation. Also, ferromagnetism is observed till room temperature due to the presence of MnSb clusters. Existence of MnSb clusters is verified through scanning electron microscopy. The carrier concentration increases with Mn doping and this results in decrease of resistivity. The observed magnetic and transport properties indicate the presence of ferromagnetic phase below 10 K in the studied system.
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Ganesan, K., Bhat, H.L. Magnetic and Magnetotransport Properties of Diluted Magnetic Semiconductor (Ga,Mn)Sb Crystals. J Supercond Nov Magn 21, 391–397 (2008). https://doi.org/10.1007/s10948-008-0341-0
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DOI: https://doi.org/10.1007/s10948-008-0341-0
Keywords
- GaMnSb
- Ferromagnetic semiconductors
- Magnetization
- Anomalous Hall effect
- Horizontal Bridgman method
- Ferromagnetic-semiconductor hybrid system