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Comprehensive uniformity analysis of GaAs-based VCSEL epiwafer by utilizing the on-wafer test capability

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Journal of Russian Laser Research Aims and scope

Abstract

A comprehensive study of the uniformity of 850 nm VCSEL epiwafer grown by the MOCVD technique is presented. By utilizing the VCSEL planar structure, uniformity test is performed on-wafer directly, besides using the conventional photoluminescence technique. The VCSEL quantum wells are found to exhibit a peak emission wavelength of 839.5 nm. Also, the grown epiwafer is observed to exhibit a Fabry–Perot cavity resonance at 846.5 nm. Various VCSEL devices fabricated from the center to the edge of the VCSEL epiwafer show a similar trend towards the light–current and output spectral characteristics. However, the device existing near the epiwafer edge is observed to exhibit significantly different characteristics, which is attributed to the physical conditions of the device near the edge, and also the limitations of the epitaxial growth.

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Authors and Affiliations

  1. Microelectronic & Nanotechnology Program, Telekom Malaysia Research & Development (TMR&D), Lingkaran Teknokrat Timur, 63000, Cyberjaya, Selangor, Malaysia

    Mohd Sharizal Alias & Sufian Mitani

  2. Institute of Microengineering & Nanoelectronics (IMEN), National University of Malaysia (UKM), 43600, Bangi, Selangor, Malaysia

    Sahbudin Shaari

  3. Faculty of Engineering, Multimedia University, 63100, Cyberjaya, Selangor, Malaysia

    P. K. Choudhury

Authors
  1. Mohd Sharizal Alias
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  2. Sahbudin Shaari
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  3. P. K. Choudhury
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  4. Sufian Mitani
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Correspondence to P. K. Choudhury.

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Sharizal Alias, M., Shaari, S., Choudhury, P.K. et al. Comprehensive uniformity analysis of GaAs-based VCSEL epiwafer by utilizing the on-wafer test capability. J Russ Laser Res 30, 368–375 (2009). https://doi.org/10.1007/s10946-009-9082-1

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  • DOI: https://doi.org/10.1007/s10946-009-9082-1

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