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To find the one- and the three-dimensionalities for the superfluid onset of the 4He films formed in nanopores, we have been studying 4He adsorbed on FSM-16 and HMM-2 that have pores of almost the same diameter, 2.8 and 2.7 nm, but ID and 3D connections of the pores, respectively. For these two substrates, the adsorption potential profile and layer-by-layer growth of 4He films were observed by the precise measurement of the vapor pressure for adsorption. The isothermal compressibility κT, the film thickness d, and the isosteric heat qst of adsorption are derived from the vapor pressure. κT and d indicate that 4He adatoms form uniform layers up the second layer on both substrates. Almost the same qst for both substrates suggest that the adsorption potential is the same between these SiO2-based substrates. These results suggest that FSM-16 and HMM-2 are ideal substrates to use in investigating the dimensionality of the superfluid onset.
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PACS numbers: 67.40.−w, 67.70.+n
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Toda, R., Taniguchi, J., Asano, R. et al. Adsorption Potentials and Film Growths of 4He in Nanometer Pores of FSM-16 (2.8 nm) and HMM-2 (2.7 nm). J Low Temp Phys 138, 177–182 (2005). https://doi.org/10.1007/s10909-005-1547-1
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DOI: https://doi.org/10.1007/s10909-005-1547-1