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Excited State Relaxation and Stabilization of Hydrogen Terminated Silicon Quantum Dots

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Abstract

Silicon is the leading semiconductor material in microelectronic industry. Owing to the large surface to volume ratio, low-dimensional Si nanostructures, for instance, silicon quantum dots exhibit diverse electronic and optical properties. Passivating the surface of Si nanostructures by a suitable species is thereby required to stabilize and engineer the dot properties in different environment. Recent theoretical advances in the investigation of the excited state properties of silicon quantum dots (QDs) are reviewed in this article. The theoretical calculations reveal that the excited state relaxation is prevalent in hydrogenated silicon nanoparticles. Stokes shift due to structure relaxation in the excited state varies with the particle size. It is therefore desirable to minimize Stokes shift for the purpose of maximizing its quantum yield or efficiency in photoluminescence applications. Consequently, surface functionalization by a suitable species turns out to be the most effective avenue. Determination of proper passivating agent is of outmost importance to satisfy the practical necessity. All these intermingled factors are briefly addressed in this article.

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Authors and Affiliations

  1. Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China

    Qi Wu, Xian Wang, Quan-Song Li & Rui-Qin Zhang

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  1. Qi Wu
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  2. Xian Wang
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Correspondence to Rui-Qin Zhang.

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Wu, Q., Wang, X., Li, QS. et al. Excited State Relaxation and Stabilization of Hydrogen Terminated Silicon Quantum Dots. J Clust Sci 24, 381–397 (2013). https://doi.org/10.1007/s10876-013-0551-x

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  • DOI: https://doi.org/10.1007/s10876-013-0551-x

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