Abstract
This work reports the studies of AC and DC conduction in bismuth doped quaternary chalcogenide glass Se80Te15−xCd5Bix (x = 0, 5, 10). Dependence of AC conductivity (σac), dielectric constant (ϵ′) and dielectric loss (ϵ″) of glasses prepared by melt quenching technique was investigated for 100 kHz–1 MHz frequency range and 294–351 K temperature range. An increment in the values of DC and AC conductivities was observed with the addition of bismuth. Dielectric parameters were found to increase with the increase in temperature however a Decrease in the values of ϵ′ and ϵ″ was observed with the increase in frequency. Temperature dependence of σdc portrayed non-linear nature and was studied for the lower (294–317 K) and intermediate (317–351 K) temperature ranges. Values of hopping distance (Rhop) and hopping energy (Whop) suggested the use of Mott’s model to interpret the σdc data for lower temperature range. DC conduction in intermediate temperature range was interpreted by Greave’s model. The density of localised states [N(EF)] was estimated using σac and σdc data for the prepared glasses and has been found to be dependent on extent of bismuth doping. In last, an attempt to correlate the structural and phase change properties of the sample on the basis of electrical measurements were made and it was found that bismuth incorporation in chalcogenide glasses tunes the material for application in phase change memory devices.
Similar content being viewed by others
Data availability
The datasets generated during and/or analysed during the current study are available from the corresponding author on reasonable request.
References
Z. Zheng, J. Yao, G. Yang, Self-assembly of the lateral In2Se3/CuInSe2 heterojunction for enhanced photodetection. ACS Appl. Mater. Interfaces 9(8), 7288–7296 (2017)
J.O. Island, S.I. Blanter, M. Buscema, H.S. van der Zant, A. Castellanos-Gomez, Gate controlled photocurrent generation mechanisms in high-gain In2Se3 phototransistors. Nano Lett. 15(12), 7853–7858 (2015)
W. Feng, W. Zheng, X. Chen, G. Liu, W. Cao, P. Hu, Solid-state reaction synthesis of a InSe/CuInSe2 lateral p–n heterojunction and application in high performance optoelectronic devices. Chem. Mater. 27(3), 983–989 (2015)
H. Lee, Y.K. Kim, D. Kim, D.H. Kang, Switching behavior of indium selenide-based phase-change memory cell. IEEE Trans. Magn. 41(2), 1034–1036 (2005)
A.N. Politano, D. Campi, M. Cattelan, I. Ben Amara, S. Jaziri, A. Mazzotti, A. Barinov et al., Indium selenide: an insight into electronic band structure and surface excitations. Sci. Rep. 7(1), 1–11 (2017)
B.J. Simonds, H.J. Meadows, S. Misra, C. Ferekides, P.J. Dale, M.A. Scarpulla, Laser processing for thin films chalcogenide photovoltaics: a review and prospectus. J. Photon. Energy 5, 050999 (2015)
C. Duan, W. Luo, T. Jiu, J. Li, Y. Wang, Lu. Fushen, Facile preparation and characterization of ZnCdS nanocrystals for interfacial applications in photovoltaic devices. J. Colloid Interface Sci. 512, 353–360 (2018)
N. Ciocchini, M. Laudato, M. Boniardi, E. Varesi, P. Fantini, A.L. Lacaita, D. Ielmini, Bipolar switching in chalcogenide phase change memory. Sci. Rep. 6(1), 1–9 (2016)
J. Vazquez, D. Garcia, G. Barreda, P.L. Lopez-Alemany, P. Villares, R. Jimenez-Garay, Crystallization of Ge0.08Sb0.15Se0.77 glass studied by DSC. J. Non-Cryst. Solids 345, 142–147 (2004)
G. Singh, J. Sharma, A. Thakur, N. Goyal, G.S.S. Saini, S.K. Tripathi, Effect of bismuth on the electrical properties of a-Ge20Se80 glasses. J. Optoelectron. Adv. Mater. 7(4), 2069–2076 (2005)
K. Kumar, S.C. Katyal, P. Sharma, N. Thakur, Effect of Bi addition on dc, ac conductivity and dielectric properties of Te15(Se100-xBix)85 glassy alloys. J. Optoelectron. Adv. Mater. 13(3), 371 (2011)
M.M. Hafiz, A.A. Othman, M.M. Elnahass, A.T. Al-Motasem, Composition and electric field effects on the transport properties of Bi doped chalcogenide glasses thin films. Physica B 390, 286–292 (2007)
S.A. Fayek, S.M. El Sayed, Effect of composition and forming parameters on CdSeTe films deposited at room temperature. J. Phys. Chem. Solids 63, 1–8 (2002)
N. Tohge, T. Minami, M. Tanaka, Electrical transport in n-type semiconducting Ge120BixSe70−xTe10 glasses. J. Non-Cryst. Solids 37, 23–30 (1980)
N. Tohge, T. Minami, Y. Yamamoto, M. Tanaka, Electrical and optical properties of n-type semiconducting chalcogenide glasses in the system Ge-Bi-Se. J. Appl. Phys. 51, 1048–1053 (1980)
K.O. Čajko, D.L. Sekulić, D.M. Petrović, V. Labaš, S. Minárik, S.J. Rakić, S.R. Lukić-Petrović, Study of electrical and microstructural properties of Ag-doped As-S-Se chalcogenide glasses. J. Non-Cryst. Solids 571, 121056 (2021)
P. Priyadarshini, S. Das, R. Naik, A review on metal-doped chalcogenide films and their effect on various optoelectronic properties for different applications. RSC Adv. 12(16), 9599–9620 (2022)
S. Kang, Y. Fu, H. Gu, C. Lin, Chalcogenide glass for thermoelectric application. J. Non-Cryst. Solids 15, 100111 (2022)
N.F. Mott, electrons in disordered structures. Adv. Phys. 16(61), 49–144 (1967)
M.H. Cohen, Review of the theory of amorphous semiconductors. J. Non-Solids 4(supplement C), 391–409 (1970)
M. Shoab, R.S. Rahman, Z. Aslam, M. Zulfequar, Effect of bismuth incorporation on thermal properties of quaternary chalcogenide glass Se80Te15-xCd5Bix (x=0,5,10) alloys. Ceram. Int. 46, 24850–24859 (2020)
M. Nardone, M. Simon, I.V. Karpov, V.G. Karpov, Electrical conduction in chalcogenide glasses of phase change memory. J. Appl. Phys. 112, 071101–0711020 (2012)
N. Suri, K.S. Bindra, M. Ahmad, J. Kumar, R. Thangaraj, Optical and electrical studies of as-prepared and annealed Se-Te-Bi thin films. Appl. Phys. A 90, 149–151 (2008)
T.M. Rajakumar, T. Bhuvaneshwarababu, R. Chandramani, Behavioural change in optical and electrical property of Cd chalcogenide films containing Te Se deposited by thermal and electron beam evaporation. Arch. Phys. Res. 2(1), 90–98 (2011)
K.M.F. Shahil, M.Z. Hossain, V. Goyal, A.A. Balandin, Micro-Raman spectroscopy of mechanically exfoliated few-quintuple layers of Bi2Te3, Bi2Se3, and Sb2Te3 materials. J. Appl. Phys. 111, 054305 (2012)
A. Soni, Yu. Zhao Yanyuan, M.K. Ligen, K. Aik, M.S. Dresselhaus, Q. Xiong, Enhanced thermoelectric properties of solution grown Bi2Te3−x sex nanoplatelet composites. Nano Lett. 12(3), 1203–1209 (2012)
J. Rangel-Cárdenas, H. Sobral, Optical Absorption Enhancement in Cd-Te Thin Films by Micro structuration of the Silicon Substrate. Materials 10, 607 (2017)
T.R. Yang et al., Far-IR reflectance spectra analysis of CdZnTe and related material. Proc. SPIE 7449, 1–5 (2009)
N. Spyros, Yannopoulos, structure and photo-induced effects in elemental chalcogens: a review on Raman scattering. J. Mater. Sci.: Mater. Electron. 31, 7565–7595 (2020)
N.F. Mott, E.A. Davis, Electronic Processes in Non-Crystalline Materials (Clarendon, Oxford, 1979)
H. Singh-Deepika, K.S. Rathore, N.S. Saxena, Study of the electrical and optical properties of GeSePb chalcogenide glass. J. Asian Ceram. Soc. 6, 30–36 (2018)
N.F. Mott, conduction in non crystalline materials. Philos. Mag. 19, 835–852 (1969)
G.N. Greaves, Small polaron conduction in V2O5P2O5. J. Non-Cryst. Solids 11, 427–446 (1973)
L. Pauling, Die Natur der Chemischen Binding (VCH Weinheim, Weinheim, 1976)
K. Kumar, S.C. Katyal, P. Sharma, N. Thakur, Effect of Bi addition on dc, ac conductivity and dielectric properties of Te15(Se100-xBix)85 glassy alloy. J. Optoelectron. Adv. Mater. 13(4), 371–376 (2011)
A.A. Yadav, E.U. Masumdar, Optical and electrical transport properties of spray deposited CdS1−xSex thin films. J. Jailcom 505(2), 787–792 (2010)
E.J. Grant, E.A. Davis, Hopping conduction in amorphous semiconductors. Solid State Commun. 15, 563–566 (1974)
S.A. Fayek, M.H. El-Fouly, H.H. Amer, A.H. Amar, M.M. El-Ocker, Electrical conductivity of amorphous semiconducting films of system (Ge20As30Se50−xTex). Solid State Commun. 93(3), 213–217 (1995)
H. Fritzsche, M. Kastner, The effect of charged additives on the carrier concentrations in lone-pair semiconductors. Philos. Mag. B 37, 285–292 (1978)
M.D. Sharma, N. Goyal, Applications of advanced electronic materials: InSe system (In10Se90)100–xPbx with x = 0, 2, 5, 10 for PCRAM applications. J. Ovon. Res. 14(1), 145–154 (2018)
M.N. Amroun, M. Khadraoui, AC conductivity and dielectric studies of Cd0.8Sn0.2S thin films. Int. J. Numer. Model. 32, e2617 (2019)
N.A. Hegab, M.A. Afifi, H.E. Atyia, A.S. Farid, ac conductivity and dielectric properties of amorphous Se80Te20-xGex chalcogenide glass film compositions. J. Alloys Compds. 477(1–2), 925–930 (2009)
P.N. Musfir, S. Mathew, V.P.N. Nampoori, S. Thomas, Investigations on frequency and temperature dependence of AC conductivity and dielectric parameters in Ge20Ga5Sb10S65 quaternary chalcogenide glass. Optik (Stuttg) 182, 1244–1251 (2019)
M.D. Sharma, Chalcogenide glasses as smart material in electronic applications, in 7th International Conference on Signal Processing and Integrated Networks (SPIN) (IEEE, 2020)
K.O. Cajko, D.L. Sekulic, S. Lukic-Petrovic, M.V. Siljegovic, D.M. Petrovic, Impedance response and I-V characteristics of Bi6(As2S3)94 and Bi7(As2S3)93 at elevated temperature. J. Mater. Sci. Mater. Electron. 31, 14730–14736 (2020)
J.C. Giuntini, J.V. Zanchetta, D. Jullien, R. Eholie, P. Houenou, Temperature dependence of dielectric losses in chalcogenide glasses. J. Non-Cryst. Solids 45(1), 57–62 (1981)
A.K. Jonscher, The universal dielectric response. Nature 267, 673–679 (1977)
S.R. Elliott, Temperature dependence of ac conductivity of chalcogenide glasses. Philos. Mag. B 37(5), 553–560 (1978)
N. Shukla, H.P. Pathak, V. Rao, D.K. Dwivedi, AC conductivity and dielectric properties of Se90Cd6Sb4 glassy alloy. Chalcogenide Lett. 13(4), 178–184 (2016)
S.R. Elliott, AC conduction in amorphous chalcogenide and pnictide semiconductors. Adv. Phys. 36(2), 135–218 (1987)
S.R. Ovshinsky, Reversible electrical switching phenomena in disorder structures. Phys. Rev. Lett. 21, 1450–1453 (1968)
I.G. Austin, N.F. Mott, Polarons in crystalline and non crystalline materials. Adv. Phys. 18(71), 41–102 (1969)
R. Bez, A. Pirovano, Non-volatile memory technologies: emerging concepts and new materials. Mater. Sci. Semicond. Process. 7, 349–355 (2004)
A.L. Lacaita, Phase-change memories: state-of-the-art, challenges and perspectives. Solid State Electron. 50, 24–31 (2006)
K.A. Campbell, C.M. Anderson, Phase-change memory devices with stacked Ge-chalcogenide / Sn-chalcogenide layers. Microelectron. J. 38, 52–59 (2007)
J.T. Devaraju, S. Asokan, E.S.R. Gopal, Electrical switching in chalcogenide glasses: the current status. Front. Mater. Phys. 1, 135–174 (2002)
S. Asokan, K.P. Lakshmi, Electrical switching and other properties of chalcogenide glasses. J. Indian Inst. Sci. 91(2), 313–330 (2011)
Funding
The authors declare that no funds, grants, or other support were received during the preparation of this manuscript.
Author information
Authors and Affiliations
Contributions
All authors contributed to the study conception and design. Material preparation, data collection and analysis were performed by MS, ZA, JA and MZ. The first draft of the manuscript was written by MS and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.
Corresponding author
Ethics declarations
Competing interests
The authors have no relevant financial or non-financial interests to disclose.
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
About this article
Cite this article
Shoab, M., Aslam, Z., Ali, J. et al. I nvestigation of electrical conductivity (AC/DC) and dielectric properties of Se 80 Te 15−x Cd 5 Bi x ( x = 0, 5, 10) quaternary chalcogenide glass . J Mater Sci: Mater Electron 34, 681 (2023). https://doi.org/10.1007/s10854-023-10052-2
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s10854-023-10052-2