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Bi-polar switching properties of FTO/CZTS/Ag device

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Abstract

Copper Zinc Tin Sulfide (CZTS) is a well-known kesterite material having a variety of optoelectronic applications. The constituent elements are earth abundant and non-toxic in nature. This investigation presents the bipolar switching characteristics of FTO/CZTS/Ag devices for resistive memory-switching applications. The material is deposited by spray pyrolysis method at a substrate temperature of 375 °C. The structural analysis shows the crystalline nature of the films. FESEM image reveals coral-like morphology. A resistive memory-switching device is fabricated with a structure of < FTO/CZTS/Ag>. The observed HRS/LRS resistance ratio of ~ 33 suggests that the device possesses good memory-switching properties. The formation and rupture of the conductive filaments of the FTO/CZTS/Ag memory device were observed. This confirms that CZTS material can be used as the switching layer to fabricate a simple, cost-effective, and non-toxic bipolar device, which can deliver the perfect switching characteristics.

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Funding

The authors declare that no funds, grants, or other supports were received during the preparation of this manuscript.

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Authors and Affiliations

  1. Optoelectronic Materials and Devices Laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli, Tamil Nadu, 620015, India

    P. Aabel, S. Sai Guru Srinivasan & M. C. Santhosh Kumar

  2. Department of Physics, B.S. Abdur Rahman Crescent Institute of Science and Technology, Chennai, 600048, India

    R. Amiruddin

Authors
  1. P. Aabel
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  2. S. Sai Guru Srinivasan
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  3. R. Amiruddin
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  4. M. C. Santhosh Kumar
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Contributions

PA contributed to conceptualization, methodology, investigation, formal analysis, and writing of the original draft. SSGS contributed to investigation, RA contributed to investigation, MCSK contributed to supervision, conceptualization, resources, and writing, reviewing, & editing of the manuscript. All authors read and approved the final manuscript.

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Correspondence to M. C. Santhosh Kumar.

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Aabel, P., Sai Guru Srinivasan, S., Amiruddin, R. et al. Bi-polar switching properties of FTO/CZTS/Ag device. J Mater Sci: Mater Electron 34, 601 (2023). https://doi.org/10.1007/s10854-023-10011-x

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