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Structural and ferroelectric growth of Ba0.85Mg0.15TiO3–Ga2O3 ceramic through hydrothermal method

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Abstract

Lead-free perovskite materials Barium Magnesium Titanate (BMT) and composite of BMT/Ga2O3were prepared using environment friendly low temperature method. XRD peak profile analysis of pure BMT and nanocomposite of BMT/Ga2O3 to determine the crystallite size have been carried out using various calculations methods like Scherrer, Williamson–Hall, and Size–Strain plot. The crystallite size was found to increase with the addition of Ga2O3 in BMT. Moreover, XRD patterns reveal the pure and crystalline phase of the prepared samples. Raman study of BMT and BMT/Ga2O3 are showing the tetragonal symmetry. SEM studies revealed that the addition of Ga2O3 accelerates the grain growth of BMT whereas EDX indicated that there is no significant trace of any impurity and confirmed the stoichiometric presence of the expected elements within the sample. SAED patterns demonstrate broad concentric rings, which confirm the presence of crystalline powder. P–E hysteresis loop confirms the ferroelectric behaviour of the samples with increase in remnant polarization and the increase in coercive field.

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Acknowledgements

The authors are thankful to Shoolini University of Biotechnology & Management Sciences, Solan (H. P.) for providing financial aid and laboratory facilities.

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Authors and Affiliations

  1. School of Physics and Materials Science, Shoolini University of Biotechnology and Management Sciences, Solan, 173229, India

    Gun Anit Kaur, Sahil Kumar & Mamta Shandilya

  2. Department of Biotechnology, Eternal University, Sirmaur, 173101, India

    Sapna Thakur

  3. School of Basic & Applied Sciences, Lingaya’s University, Faridabad, 121002, India

    Shweta Thakur

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  1. Gun Anit Kaur
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Correspondence to Mamta Shandilya.

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Kaur, G.A., Kumar, S., Thakur, S. et al. Structural and ferroelectric growth of Ba0.85Mg0.15TiO3–Ga2O3 ceramic through hydrothermal method. J Mater Sci: Mater Electron 32, 23631–23644 (2021). https://doi.org/10.1007/s10854-021-06854-x

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