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Investigation of Ru-doped Sb2Te alloy for high-speed and good thermal stability phase change memory applications

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Abstract

Phase change memory (PCM) is regarded as a promising candidate for next-generation data storage devices. However, the contradiction between crystallization speed and amorphous thermal stability is still a great challenge. In this paper, we demonstrate PCM based on Ru-doped Sb2Te (RST) alloy, showing 112 °C 10-year data retention, 229 °C crystallization temperature, 6 ns Set speed, and 85% reduced power consumption compared to Sb2Te(ST)-based device. The good performance attributes to the grain refinement of the crystalline films with inclusion of Ru, making it a promising material for high-speed and good thermal stability phase change memory applications.

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Acknowledgements

This work was supported by the Genetic Engineering of Precious Metal Materials in Yunnan Province (202002AB080001-1) and Technical innovation talents of Yunnan Province (2019HB107), and Science and Technology Innovation Team of Yunnan Province (2019HC024).

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Authors and Affiliations

  1. College of Materials Science and Engineering, Kuming University of Science Technology, Kunming, 650093, China

    Zhilong Tan, Zhao Zongyan & Jialin Chen

  2. State Key Laboratory of New Technologies for Comprehensive Utilization of Platinum Metals, Kunming Institute of Precious Metals, Kunming, 650106, China

    Zhilong Tan, Ming Wen, Junmei Guo, Jialin Chen, Xiaofei Wu & Zhihao Song

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  1. Zhilong Tan
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  2. Zhao Zongyan
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  3. Ming Wen
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Correspondence to Zhilong Tan or Jialin Chen.

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Tan, Z., Zongyan, Z., Wen, M. et al. Investigation of Ru-doped Sb2Te alloy for high-speed and good thermal stability phase change memory applications. J Mater Sci: Mater Electron 32, 20679–20683 (2021). https://doi.org/10.1007/s10854-021-06581-3

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  • DOI: https://doi.org/10.1007/s10854-021-06581-3

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