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Diversifying grain orientation and expediting 10 μm Cu/Sn/Cu TLP bonding process with Ni doping

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Abstract

Prolonged bonding time and the excess thermal stress have been the bottleneck for transient liquid-phase (TLP) bonding in heterogeneous integration. To alleviate such issues, adequate amount of Ni was added to the Sn-3.0Ag-0.5Cu (SAC305) solder. With addition of Ni, the time elapsed for complete TLP bonding was shortened significantly. The distinct correlation between intermetallic compounds (IMCs) morphology and Ni content was investigated on both top and bottom substrates. Moreover, the effect of Ni on diversification of grain orientation of IMCs was also quantified by electron backscatter diffraction (EBSD). Also, Ni doping in TLP bonding provided smaller grain sizes. The mechanical strength of the TLP interconnection is therefore expected to be enhanced by Ni doping in solder.

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Acknowledgements

Financial support from the Ministry of Science and Technology, Taiwan, under the Contract No. 108-2221-E-007-001 is much appreciated. The technical support of FE-EPMA in the Precision Instrument Center of National Tsing Hua University is also appreciated.

Funding

Financial support from the Ministry of Science and Technology, Taiwan, under the Contract No. 108-2221-E-007-001 is much appreciated.

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All authors contributed to the study conception and design. Material preparation, data collection, and analysis were performed by YW, CJF, RS, and ST. The first draft of the manuscript was written by YW and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript. YW, CJF, and RS involved in conceptualization; YW did methodology and writing—original draft preparation; YW, CJF, RS, and ST performed formal analysis and investigation; YW, RS, and JD participated in writing—review and editing; and JD did supervision.

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Correspondence to Jenq-Gong Duh.

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Wang, YC., Fleshman, C.J., Song, RW. et al. Diversifying grain orientation and expediting 10 μm Cu/Sn/Cu TLP bonding process with Ni doping. J Mater Sci: Mater Electron 32, 2639–2646 (2021). https://doi.org/10.1007/s10854-020-05039-2

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  • DOI: https://doi.org/10.1007/s10854-020-05039-2

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