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Improved electrical properties of sputtering Pb1.10(Zr0.52,Ti0.48)O3/Pb1.25(Zr0.52,Ti0.48)O3 multilayer thin films

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Abstract

Multilayer PZT thin films composed of Pb1.10(Zr0.52,Ti0.48)O3 and Pb1.25(Zr0.52,Ti0.48)O3 films were deposited on Pt(111)/Ti/SiO2/Si(100) substrate coated by Pb1.10(Zr0.52,Ti0.48)O3 buffer layer using RF magnetron sputtering. The effect of variation of layer numbers of Pb1.10(Zr0.52,Ti0.48)O3 and Pb1.25(Zr0.52,Ti0.48)O3 thin films in multilayer PZT films was investigated. X-ray diffraction (XRD) analysis indicates all PZT films possess pure perovskite phase and (111) preferred orientation. For multilayer thin films, dense perovskite microstructures without obvious defects were observed using scanning electron microscope (SEM). Optimal dielectric properties with a εr of 1092 and a tanδ of 0.04 at 1 kHz were obtained in the PZT film with the maximum layer numbers (8-layer film, namely L-8). Well-saturated P–E was observed in L-8 film by a standard ferroelectric test system (Pr = 26.1 µC/cm2, Ec = 60.1 kV/cm). Moreover, a Lower leakage current density (J = 5.49 × 10−6 A/cm2 at 117 kV) was achieved in sample L-8.

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Acknowledgements

This work is supported by national natural science foundation of China (No. 51775088).

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Authors and Affiliations

  1. Key Laboratory for Micro/Nano Technology and Systems of Liaoning Province, Dalian University of Technology, Dalian, 116024, China

    Biao Li, Kehong Li, Yingze Wan, Shuai Zhang, Zhifeng Yang, Lingfeng Meng & Helin Zou

  2. Faculty of Mechanical and Electrical Engineering, Kunming University of Science and Technology, Kunming, 650093, China

    Xing Wang

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  1. Biao Li
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Li, B., Wang, X., Li, K. et al. Improved electrical properties of sputtering Pb1.10(Zr0.52,Ti0.48)O3/Pb1.25(Zr0.52,Ti0.48)O3 multilayer thin films. J Mater Sci: Mater Electron 31, 21661–21669 (2020). https://doi.org/10.1007/s10854-020-04679-8

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