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Growth and characterization of inclusion-free CdMgTe single crystals using modified Bridgman method

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Abstract

CdMgTe crystal is a hopeful room temperature radiation detection material because of some potential advantages. The Cd0.95Mg0.05Te ingot with free of inclusion was successfully grown by a modified Bridgman method in this paper. This results was achieved by using a significant excess cadmium and in situ annealing during the growth process. The grown ingot was about 30 mm in diameter and 120 mm in length. The CdMgTe crystal had a cubic zinc-blende structure. The distribution of Mg element along growth direction was homogeneous. In the whole ingot, no inclusions were observed in IR images and as high IR transmittance as above 60% was measured. Raman scattering spectroscopy showed a good crystal quality for CdMgTe crystals. Moreover, the resistivity with 109 Ω cm order of magnitudes for the ingot could be useful for the fabrication of room temperature radiation detector.

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Acknowledgements

This research was founded by the National Natural Science Foundations of China (Grant No. 51602026), the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2018JM5150), the Special Fund for Basic Scientific Research of Central Colleges of Chang'an University (Grant No. 300102318106) and the Undergraduate Training Programs for Innovation and Entrepreneurship of Chang’an University (Grant No. 201910710569).

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Authors and Affiliations

  1. School of Materials Science and Engineering, Chang’an University, Xi’an, 710061, China

    Pengfei Yu, Biru Jiang, Yongren Chen, Hanyue Lu, Yongwu Qi, Yuanpei Liu, Zhefan Ma, Jiahong Zheng & Lijun Luan

  2. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an, 710072, China

    Pengfei Yu & Wanqi Jie

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  1. Pengfei Yu
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Yu, P., Jiang, B., Chen, Y. et al. Growth and characterization of inclusion-free CdMgTe single crystals using modified Bridgman method. J Mater Sci: Mater Electron 31, 10207–10212 (2020). https://doi.org/10.1007/s10854-020-03566-6

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  • DOI: https://doi.org/10.1007/s10854-020-03566-6

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