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Study on leakage current, ferroelectric and dielectric properties of BFMO thin films with different bismuth contents

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Abstract

Bi(1+x)Fe0.95Mn0.05O3 thin films with different bismuth contents (abbreviated as B1+xFMO, x = − 0.05, 0, 0.05, 0.1) were fabricated by chemical solution deposition on ITO/glass substrates. The effects of Bi nonstoichiometry on the microstructure, leakage current, ferroelectric and dielectric properties of BFMO films are investigated. The B1.05FMO and B1.1FMO thin films possess single perovskite structure, while the secondary phase of Bi2Fe4O9 can be observed in BFMO and B0.95FMO thin films. Compared with the other three samples in this work, drastically reduced leakage current can be found in B1.05FMO. For each film, the dominant conduction mechanisms are the Ohmic conduction and the space charge limited conduction at lower electric fields and the interface-limited Fowler–Nordheim tunneling at higher electric regions, respectively. Among the B1+xFMO films (x = − 0.05, 0, 0.05, 0.1), the B1.05FMO film possesses significantly improved electrical properties, reflected by a large remanent polarization (Pr ~ 68.3 µC/cm2), lower dielectric loss (tanδ ~ 0.02), large dielectric constant (εr ~ 210) and high tunability (88%). These results suggest that the 5 mol% excess of Bi is the prior content to get better insulation, optimize ferroelectric as well as dielectric properties of BiFeO3 film, giving reference to modify electrical performances of ferroelectric materials through regulation of volatile element.

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Acknowledgements

This work was supported by the Shandong Provincial Natural Science Foundation of China (ZR2017LEM008).

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Authors and Affiliations

  1. School of Materials Science and Engineering, University of Jinan, Jinan, 250022, China

    L. X. Chen, C. Xu, X. L. Fan, X. H. Cao, K. Ji & C. H. Yang

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  1. L. X. Chen
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  2. C. Xu
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  3. X. L. Fan
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  4. X. H. Cao
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Chen, L.X., Xu, C., Fan, X.L. et al. Study on leakage current, ferroelectric and dielectric properties of BFMO thin films with different bismuth contents. J Mater Sci: Mater Electron 30, 7704–7710 (2019). https://doi.org/10.1007/s10854-019-01086-6

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