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Enhanced acetone detection using Au doped ZnO thin film sensor

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Abstract

Zinc oxide (ZnO) thin films are prepared using sol–gel method for acetone vapor sensing. Zinc acetate dihydrate (Zn(CH3COO)2·2H2O) was taken as starting material and a stable and homogeneous solution was prepared in ethanol by deliquescing the zinc acetate and distinct amount of monoethanolamine as a stabilizing agent. The prepared solution was then coated on silicon substrates by spin coating method and then annealed at 650 °C for preparing ZnO thin films. The thickness of the film was maintained at 410 nm. The structural, morphological and optical studies were done for the synthesized ZnO thin films. The operating temperature and sensor response is considered to be an important parameter for the gas sensing behavior of any material. Therefore, the present study examined the effect of sensing behavior of 3% v/v gold (Au) doped ZnO thin films as a sensor. The response characteristics of 410 nm ZnO thin film for temperature ranging from 180 to 360 °C were determined for the acetone vapors. The reported study provides a significant development towards acetone sensors, where a very high sensitivity with rapid response and recovery times are reported with lowered optimal operating temperature as compared to bare ZnO nano-chains like structured thin films. In comparison to the bare ZnO thin films giving a response of 63 at an operating temperature of 320 °C, a much better response of 132.3 was observed for the Au doped ZnO thin films at an optimised operating temperature of 280 °C for a concentration of 500 ppm of acetone vapors.

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Acknowledgements

Authors are thankful to Electronic materials and devices laboratory, Department of Physics and Astrophysics, University of Delhi for providing the financial support and permission for working in laboratory.

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Correspondence to Manish Deshwal.

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Deshwal, M., Arora, A. Enhanced acetone detection using Au doped ZnO thin film sensor. J Mater Sci: Mater Electron 29, 15315–15320 (2018). https://doi.org/10.1007/s10854-018-8805-x

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  • DOI: https://doi.org/10.1007/s10854-018-8805-x

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