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Fabrication and characterization of n-ZnO/p-GaAs structure

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Abstract

In this investigation, n-ZnO/p-GaAs structure is prepared by a sol–gel route. ZnO film has wurtzite structure with (101) preferential direction. The nano-sized particles are homogeneously dispersed on the film surface. The root mean square roughness and optical band gap values are determined to be 11.49 nm and 3.272 eV. The electrical study shows that n-ZnO/p-GaAs structure has a rectifying property under the dark. The ideality factor and barrier height of structure are defined to be 1.52 and 0.92 eV, respectively. As a result of present work, n-ZnO/p-GaAs structure can be used in a variety of electronic applications.

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Authors and Affiliations

  1. Department of Basic Sciences, Science Faculty, Erzurum Technical University, 25050, Erzurum, Turkey

    G. Turgut & S. Duman

  2. Department of Physics, Science Faculty, Ataturk University, 25240, Erzurum, Turkey

    F. S. Kaya

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  1. G. Turgut
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Correspondence to F. S. Kaya.

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Turgut, G., Kaya, F.S. & Duman, S. Fabrication and characterization of n-ZnO/p-GaAs structure. J Mater Sci: Mater Electron 29, 7750–7755 (2018). https://doi.org/10.1007/s10854-018-8771-3

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  • DOI: https://doi.org/10.1007/s10854-018-8771-3

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