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Structural variation and near infrared luminescence in Mn5+-doped M2SiO4 (M = Ba, Sr, ca) phosphors by cation substitution

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Abstract

Alkaline earth orthosilicates M2SiO4 (M = Ba, Sr and Ca) phosphors doped with Mn5+ ions have been prepared by the conventional solid-state reaction method. The crystal structures were verified by X-ray diffraction. By varying the host composition from Ba to Ca, the position shifting of photoluminescence emission bands corresponding to the 1E → 3A2 transition are induced by the increasing angular distortion and covalence. The nonradiative energy transfer becomes a dominant role in the photoluminescence process with substituting Ba2+ sites for smaller cations. The structural evolution and relevant luminescence mechanisms in (Ba1−xCax)2SiO4 phosphors also have been investigated in detail. It reveals that the chemical composition modification and structural variation can be an efficient approach to optimize the photoluminescence behaviors.

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Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (Grants No. 51472091), Guangdong Natural Science Foundation (Grants No. S2011030001349).

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Authors and Affiliations

  1. State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Technology, South China University of Technology, Guangzhou, China

    Xiaowen Zhang, Jianmin Nie, Shanshan Liu & Jianrong Qiu

  2. Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, Guangzhou, China

    Xiaowen Zhang, Jianmin Nie, Shanshan Liu & Jianrong Qiu

  3. State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, China

    Jianrong Qiu

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  1. Xiaowen Zhang
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Correspondence to Jianrong Qiu.

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Zhang, X., Nie, J., Liu, S. et al. Structural variation and near infrared luminescence in Mn5+-doped M2SiO4 (M = Ba, Sr, ca) phosphors by cation substitution. J Mater Sci: Mater Electron 29, 6419–6427 (2018). https://doi.org/10.1007/s10854-018-8622-2

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  • DOI: https://doi.org/10.1007/s10854-018-8622-2

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