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Influence of orientation on dielectric and ferroelectric properties of the BNT-BT-ST Thin films

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Abstract

Highly epitaxial 0.755(Bi0.5Na0.5)TiO3-0.065BaTiO3-0.18SrTiO3 (BNT-BT-ST) ferroelectric films with (100), (110) and (111) orientations were fabricated on Nb doped SrTiO3 (N-ST) substrates. Three patterns of microstructure morphologies are observed in the epitaxial thin films. The superior ferroelectric with remanent polarization Pr of 18 µC/cm2 is obtained in (100) oriented thin film. The excellent dielectric properties with highest dielectric constant (1170) and tunability (68%) exhibit in the (111) oriented thin films. Both of the ferroelectric and dielectric properties in the epitaxial BNT-BT-ST films are more remarkable than those of the polycrystalline BNT-BT-ST film. The results should be ascribed to the orientated microstructure and ferroelectric-to-relaxor transition observed in the epitaxial BNT-BT-ST thin films. Strong orientation dependences of microstructure and electric properties are due to the relative alignment of crystallites and anisotropic polarization rotation. This study provides an insight into how to utilize orientation to regulate the structure and properties of epitaxial thin films.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant No. 51502127 and 51701091); the National Key R&D Program of China (Grant No. 2016YFB0402701) and the Natural Science Foundation of Shandong Province of China (Grant No. ZR2016EMM02 and ZR2017QB017).

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Authors and Affiliations

  1. College of Materials Science and Engineering, Liaocheng University, Liaocheng, 252059, China

    Wei Li, Jigong Hao, Chengchao Hu, Juan Du, Peng Fu & Denghu Wei

  2. School of Environmental and Materials Engineering, Yantai University, Yantai, 264005, China

    Ruiqing Chu & Zhijun Xu

  3. State Key Laboratory of New Ceramic and Fine Processing, Tsinghua University, Beijing, 100084, China

    Zhenxing Yue

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  1. Wei Li
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  2. Ruiqing Chu
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Correspondence to Wei Li.

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Li, W., Chu, R., Xu, Z. et al. Influence of orientation on dielectric and ferroelectric properties of the BNT-BT-ST Thin films. J Mater Sci: Mater Electron 29, 20952–20958 (2018). https://doi.org/10.1007/s10854-018-0239-y

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