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Effect of Zn2+ doping on the structural, magnetic and dielectric properties of MnFe2O4 prepared by the sol–gel method

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Abstract

Mn1−xZnxFe2O4 (x = 0.2–0.8) ferrite samples were successfully prepared by the sol–gel method. X-ray diffraction study reveals that single cubic spinel phase was formed in Mn1−xZnxFe2O4 samples. The SEM micrographs revealed that the microstructures change significantly with different Zn2+ doping concentration and sintering temperature while the grain size grow up to 9.48 μm for Mn0.6Zn0.4Fe2O4 sample sintered at 1100 °C. Further, the dielectric and magnetic measurements indicated that both Zn2+ doping and sintering temperature could affect both electrical and magnetic parameters such as dielectric constant and saturation magnetization in a great manner. The Mn0.6Zn0.4Fe2O4 sample sintered at 1100 °C for 8 h is found to show the largest Ms value (77.30 emu/g) in this work. These results indicate that Zn2+ doping or sintering temperature can adjust the microstructures, dielectric and magnetic properties of Mn1−xZnxFe2O4 ferrites.

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Acknowledgements

This work was supported by National Natural Science Foundation of China (NSFC) (Nos. 51602214, 11604234 and 11447189), Natural Science Foundation of Shanxi Province (Nos. 2015021026 and 201601D202010).

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Authors and Affiliations

  1. Key Lab of Advanced Transducers and Intelligent Control System, Ministry of Education, Taiyuan University of Technology, Taiyuan, 030024, People’s Republic of China

    Li Sun

  2. College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan, 030024, People’s Republic of China

    Li Sun, Jianqin Guo, Qing Ni, Ensi Cao, Yongjia Zhang & Wentao Hao

  3. College of Physics and Electrical Engineering, Anyang Normal University, Anyang, 455000, People’s Republic of China

    Lin Ju

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  1. Li Sun
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  2. Jianqin Guo
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Correspondence to Li Sun.

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Sun, L., Guo, J., Ni, Q. et al. Effect of Zn2+ doping on the structural, magnetic and dielectric properties of MnFe2O4 prepared by the sol–gel method. J Mater Sci: Mater Electron 29, 5356–5362 (2018). https://doi.org/10.1007/s10854-017-8501-2

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  • DOI: https://doi.org/10.1007/s10854-017-8501-2

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