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The structure, defects, electrical and magnetic properties of BiFe1−x Zr x O3 multiferroic ceramics

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Abstract

BiFe1−x Zr x O3 (x = 0.00–0.30) ceramics were synthesized using solid state reaction method followed by rapid liquid phase sintering, and the microstructure, electrical and magnetic properties of the synthesized ceramics were systematically investigated. The XRD patterns show that no impurity phases exist in Zr doped samples; Zr doping induces the crystal structure distortion when x ≤ 0.10, and a structural phase transition occurs when the content of Zr varies from 0.10 to 0.20. SEM observations indicate that the average grain size is remarkably decreased by Zr doping. Positron annihilation lifetime spectra results indicate that cation vacancy-type defects exist in all samples, the cation vacancy concentration increases with increasing Zr content from 0.00 to 0.20, and then decreases with further increase of Zr content. Electrical and magnetic measurements show that enhanced leakage, ferroelectric and magnetic properties are observed in Zr doped ceramics. The analysis of microstructure and properties show that the cation vacancy defect plays an important role in modulating the electrical and magnetic properties of BiFeO3.

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Acknowledgements

This work is supported by the National Natural Science Foundation of China (No. 11775192, 11305142, 11675149), National Natural Science and Henan Province United Foundation of China (No.U1204601) and Key Members of the Outstanding Young Teacher of Henan Province and Zhengzhou University of Light Industry (No. 2015GGJS-185).

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Authors and Affiliations

  1. School of Physics and Electronic Engineering, Zhengzhou University of Light Industry, Zhengzhou, 450002, China

    H. Y. Dai, L. T. Gu, X. Y. Xie, T. Li, Z. P. Chen & Z. J. Li

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  1. H. Y. Dai
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  2. L. T. Gu
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  3. X. Y. Xie
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  4. T. Li
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Correspondence to Z. P. Chen.

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Dai, H.Y., Gu, L.T., Xie, X.Y. et al. The structure, defects, electrical and magnetic properties of BiFe1−x Zr x O3 multiferroic ceramics. J Mater Sci: Mater Electron 29, 2275–2281 (2018). https://doi.org/10.1007/s10854-017-8143-4

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  • DOI: https://doi.org/10.1007/s10854-017-8143-4

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