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Fabrication of Cu2ZnSnS4 thin films by simple solution method using citric acid as complexing agent

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Abstract

Cu2ZnSnS4 (CZTS) films were prepared by sulfurizing Cu–Zn–Sn precursor deposited via a simple solution method using environment-friendly citric acid as complexing agent. A single Cu2ZnSnS4 thin film was obtained at 500 °C under a mixed N2 + H2S (5%) atmosphere. The effects of sulfurization temperature on structural, morphological and optical properties were studied. The results showed that the CZTS thin film annealed at 500 °C exhibited large agglomeration of grains, ideal band gap (E g  = 1.49 eV) and high optical absorption coefficient (>104 cm−1). The resulted carrier concentration and mobility were about 3.652 × 1018 cm−3 and 26.32 cm2/Vs, respectively.

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Acknowledgements

This research is financial supported by National Science Foundation of China (61176062), Project of Jiangsu Industry-Academia-Research (BY2015057-19), the Priority Academic Program Development of Jiangsu Higher Education Institutions, Funding of Jiangsu Innovation Program for Graduate Education (CXLX12_0146), the research fund of Jiangsu Province Cultivation base for State Key Laboratory of Photovoltaic Science and Technology (SKLPSTKF201506) and the Fundamental Research Funds for the Central Universities.

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Authors and Affiliations

  1. College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, 29 Yudao Street, Nanjing, 210016, People’s Republic of China

    Hao Guan, Honglie Shen & Wei Wang

  2. School of Materials Engineering, Yancheng Institute of Technology, 9 Yinbing Street, Yancheng, 224051, People’s Republic of China

    Hao Guan

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  1. Hao Guan
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  2. Honglie Shen
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  3. Wei Wang
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Correspondence to Honglie Shen.

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Guan, H., Shen, H. & Wang, W. Fabrication of Cu2ZnSnS4 thin films by simple solution method using citric acid as complexing agent. J Mater Sci: Mater Electron 28, 14424–14429 (2017). https://doi.org/10.1007/s10854-017-7303-x

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  • DOI: https://doi.org/10.1007/s10854-017-7303-x

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