Abstract
Investigation of metal organic decomposed rare earth cerium oxide thin films deposited on Si substrate by sol–gel spin coating technique was carried out. The structural properties have been examined by using XRD, Fourier transform infrared spectroscopy (FTIR), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The XRD confirms the cubic phase of CeO2 thin films with (111) plane observed at 28.54°. The FTIR and EDAX spectra confirm the formation of CeO2 films with atomic percentage of 19.39 and 54.82% of Ce and O2, respectively. Thickness of 60.11 nm of CeO2 film measured by cross sectional FESEM image, the average roughness of ~0.6 nm of 400 °C annealed CeO2 films were observed from AFM micrograph. The MOS capacitors were fabricated by using Ti/Au bilayer metal contact depositing by E-beam evaporator on CeO2/Si thin film for electrical measurements. Capacitance and conductance voltage measurement was carried out to determine the effective oxide charges (Qeff), interface trap density (Dit) and dielectric constant (k) and are 2.48 × 1012 cm−2, 1.26 × 1012 eV−1cm−2 and ~39, respectively. The effective metal work function of 5.68 for Ti/Au bilayer is observed to be higher than the work function of Ti or Au metals in vacuum.
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A.I. Kingon, J.P. Maria, S.K. Streiffer, Nature 406, 1032 (2000)
A. Duba, V. Jaggi, A. Verma, A. Mishra, IJERT 2, 732 (2013)
A.G. Khairnar, A.M. Mahajan, Solid-State Sci. 15, 24 (2013)
A.M. Mahajan, A.G. Khairnar, B.J. Thibeault, Silicon 8, 345 (2016)
A.M. Mahajan, A.G. Khairnar, B.J. Thibeault, Semiconductors 48, 497 (2014)
X. Zhang, H. Tu, H. Zhao, M. Yang, X. Wang, Y. Xiong, Z. Yang, J. Du, W. Wang, D. Chen, Appl. Phys. Lett. 99, 132902-1 (2011)
A.G. Khairnar, Y.S. Mhaisagar, A.M. Mahajan, J. Nano Electron. Phys. 5, 03002–1 (2013)
H.J. Quah, K.Y. Cheong, Nanoscale Res. Lett 53, 1 (2013)
K. Karakaya, A. Zinine, J.G.M. van Berkum, M.A. Verheijen, Z.M. Rittersma, G. Rijnders, D.H.A Blank, J. Electrochem. Soc 153, F233 (2014)
A.G. Khairnar, A. M. Mahajan, Bull. Mater. Sci. 36, 259 (2013)
W.F. Lim, K.Y. Cheong, J Mater. Sci. 23, 257 (2012)
M.L. Dos Santos, R.C. Lima, C.S. Riccardi, R.L. Tranquilin, P.R. Bueno, J.A. Varela, E. Longo, Mater. Lett. 62, 4509 (2008)
H. Guo, Y. Qiao, Appl. Sur. Sci 254, 1961 (2008)
M. Mazaheri, S.A. Hassanzadeh-Tabrizi, M. Aminzare, S.K. Sadrnezhaad, Proceedings of the 11th ECERS Conference, Krakow, 655 (2009)
S.K. Chuah, K.Y. Cheong, Z. Lockman, Z. Hassan, Mater. Sci. Semicond. Process. 14, 101 (2011)
R. Garg, D. Misra, S. Guha, IEEE Trans. Device Mater. Reliab. 6, 455 (2006)
Y. Nishikawa, N. Fukushima, N. Yasuda, K. Nakayama, S. Ikegawa, Jpn. J. Appl. Phys. 41, 2480 (2002)
F. Ana, Najeeb-ud-din, IJECT 2, 29 (2011)
H. Wen, P. Majhi, K. Choi, C.S. Park, H.N. Alshareef, H. Rusty Harris, H. Luan, H. Niimi, H. Park, G. Bersuker, P.S. Lysaght, D. Kwong, S.C. Song, B. Hun Lee, R. Jammy, Microelectron. Eng. 85, 2 (2008)
S.V. Jagadeesh Chandra, J.S. Kim, K.W. Moon, C.J. Choi, Microelectron. Eng. 89, 76 (2012)
C. Leroux, S. Baudot, M. Charbonnier, A. Van der Geest, P. Caubet, A. Toffoli, G. Blaise, G. Ghibaudo, F. Martin, G. Reimbold, Solid State Electron. 88, 21 (2013)
K. Han, P.F. Hsu, M. Beach, T. Henry, N. Yoshida, A. Brand, Proceedings of 13th International Workshop on Junction Technology, (2013)
M. Mustafa, T.A. Bhat, M.R. Beigh, WJNSE 3, 17 (2013)
M. Hasan, H. Park, J.M. Lee, H. Hwang, Electrochem. Solid-State Lett. 11, H124 (2008)
B. Magyari-Köpe, S. Park, L. Colombo, Y. Nishi, K. Cho, J. Appl. Phys 105, 013711–013711 (2009)
C.H. Lu, G.M.T. Wong, R. Birringer, R. Dauskardt, M.D. Deal, B.M. Clemens, Y. Nishi, J. Appl. Phys. 107, 063710–063711 (2010)
S.Y. Lin, Y.S. Lai, ECS J. Solid State Sci. Technol. 3, N161 (2014)
H. Kai, M. Xueli, Y. Hong, W. Wenwu, J. Semicond. 34, 076003-1 (2013)
Acknowledgements
The authors acknowledge with thanks to the University Grants Commission, for providing financial support to carry out this work through major research project vide File No. 43-302/2014(SR) dated 6/7/2015. The authors Khushabu S. Agrawal and Vilas S. Patil, thankful to DST-INSPIRE and UGC-BSR, New Delhi for providing financial support.
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Agrawal, K.S., Patil, V.S., Khairnar, A.G. et al. Preparation of rare earth CeO2 thin films using metal organic decomposition method for metal-oxide–semiconductor capacitors. J Mater Sci: Mater Electron 28, 12503–12508 (2017). https://doi.org/10.1007/s10854-017-7072-6
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DOI: https://doi.org/10.1007/s10854-017-7072-6