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Effect of manganese concentration on physical properties of ZnS:Mn thin films prepared by chemical bath deposition

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Abstract

ZnS:Mn thin films were grown by chemical bath deposition technique on glass substrates for different doping ratios y = [Mn2+]/[Zn2+] (y = 0, 6, 12 and 18 at. %). Structural, morphological, optical and electrical properties were studied by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), UV–Vis–NIR spectrophotometry, spectrofluorimetry, Hall effect measurement. In fact, the XRD analysis showed that ZnS:Mn films were poorly crystalline. The average transmittance of all films was greater than 70 % in the visible range. The effect of Mn doping on refractive index, extinction coefficient and other optical parameters was also investigated. Measured electrical resistivity decreased slightly from 7.586 × 104 to 6.819 × 104 Ω cm with increasing of doping concentration from 0 to 6 at. % then it increased again to achieve 16.73 × 104 Ω cm for \(y\) equals to 18 at. %.

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Authors and Affiliations

  1. Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Tunis El Manar, Université Tunis El Manar, 2092, Tunis, Tunisia

    Abdelhak Jrad, Wafa Naffouti, Tarek Ben Nasr & Najoua Turki-Kamoun

  2. CNRS UMR-7086, ITODYS, Université Paris Diderot, Sorbonne Paris Cité, 75013, Paris, France

    Abdelhak Jrad & Souad Ammar

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  1. Abdelhak Jrad
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  2. Wafa Naffouti
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Correspondence to Abdelhak Jrad.

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Jrad, A., Naffouti, W., Ben Nasr, T. et al. Effect of manganese concentration on physical properties of ZnS:Mn thin films prepared by chemical bath deposition. J Mater Sci: Mater Electron 28, 1463–1471 (2017). https://doi.org/10.1007/s10854-016-5682-z

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  • DOI: https://doi.org/10.1007/s10854-016-5682-z

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