Abstract
PbS and PbSe were prepared by hot injection method. The powders were used for preparing the corresponding films by using thermal evaporation technique. The structural, optical and electrical properties of PbS and PbSe thin films were investigated. The structural properties of PbS and PbSe were investigated by X-ray diffraction, transmission electron microscopy and energy dispersive X-ray techniques (EDX). PbS and PbSe films were found to have cubic rock salt structure. The particles size ranged from 1.32 to 2.26 nm for PbS and 1.28–2.48 nm for PbSe. EDX results showed that PbS films have rich sulphur content, while PbSe films have rich lead content. The optical constants (absorption coefficient and the refractive index) of the films were determined in the wavelength range 200–2500 nm. The optical energy band gap of PbS and PbSe films was determined as 3.25 and 2.20 eV, respectively. The refractive index, the optical dielectric constant and the ratio of charge carriers concentration to its effective mass were determined. The electrical resistivity, charge carriers concentration and carriers mobility of PbS at room temperature were determined as 0.55 Ω cm, 1.7 × 1016 cm−3 and 656 cm2 V−1 s−1, respectively, and for PbSe films they were determined as 0.4 Ω cm, 9 × 1015 cm−3 and 1735 cm2 V−1 s−1, respectively. These electrical parameters were investigated as a function of temperature.
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El-Menyawy, E.M., Mahmoud, G.M., Ibrahim, R.S. et al. Structural, optical and electrical properties of PbS and PbSe quantum dot thin films. J Mater Sci: Mater Electron 27, 10070–10077 (2016). https://doi.org/10.1007/s10854-016-5080-6
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DOI: https://doi.org/10.1007/s10854-016-5080-6