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Efficiency improvement of quantum dot sensitized solar cells with inserting ZnS layer in the photoanode

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Abstract

This study reports the improved performance of quantum dot-sensitized solar cells by inserting ZnS layer between the TiO2 film and CdS/CdSe quantum dots. An energy conversion efficiency of 2.84 % was attained. The enhancement introduced by inserting ZnS in moderation was attributed to the promoted nucleation of CdS QDs and enhanced light harvesting, as well as the improved electron transport at the interface in the photoanode.

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Acknowledgments

The research was supported by the Grant Nos. 61106127 and 51472034 from the National Natural Science Foundation of China, No. 2013CFA088 from the Science Foundation of Educational Commission of Hubei Province of China.

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Authors and Affiliations

  1. Ministry of Education, Key Laboratory for the Green Preparation and Application of Functional Materials, Faculty of Materials Science and Engineering, Hubei Collaborative Innovation Center for Advanced Origanic Chemical Materials, Hubei University, Wuhan, 430062, People’s Republic of China

    Fei Deng, Li Wan & Dean Shi

  2. School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou, 434023, People’s Republic of China

    Fei Deng, Xingan Mei, Xiangyu Wan, Runzhou Fan, Qingfeng Wu & Yan Xiong

  3. College of Chemistry and Environmental Engineering, Yangtze University, Jingzhou, 434023, People’s Republic of China

    Xuemin Yan

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  1. Fei Deng
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  2. Xingan Mei
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  3. Xiangyu Wan
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  4. Runzhou Fan
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  5. Qingfeng Wu
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  6. Xuemin Yan
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  7. Li Wan
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  8. Dean Shi
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  9. Yan Xiong
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Correspondence to Dean Shi or Yan Xiong.

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Deng, F., Mei, X., Wan, X. et al. Efficiency improvement of quantum dot sensitized solar cells with inserting ZnS layer in the photoanode. J Mater Sci: Mater Electron 26, 7635–7638 (2015). https://doi.org/10.1007/s10854-015-3402-8

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  • DOI: https://doi.org/10.1007/s10854-015-3402-8

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