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Preparation and photovoltaic properties of silicon quantum dots embedded in a dielectric matrix: a review

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Abstract

Over the last few years silicon quantum dots (Si QDs) have come under intensive research because of their interesting physical properties and their potential use in future electronic and optoelectronic applications. Focusing on photovoltaic applications, we review recent progress in silicide-embedded Si QDs films with different fabrication techniques and different characteristics. Some avenues for further material improvements are discussed. The performances of several photovoltaic devices reported in the literature are also reviewed and discussed. We assess the state of the art in the area of Si QDs layer deposition, including fabrication technologies and film properties, and highlight the challenges that need to be overcome. Finally, some existing problems and future work are pointed out.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China (Grant Nos. 51362031, U1037604), A Project Supported by Scientific Research Fund of Sichuan Provincial Education Department (Grant No. 15ZB0317), and Scholarship Award for Excellent Doctoral Student granted by Yunnan Province.

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  1. Key Laboratory of Education Ministry for Advance Technique and Preparation of Renewable Energy Materials, Yunnan Normal University, Kunming, 650092, China

    Xiaobo Chen & Peizhi Yang

  2. School of Physics and Mech-tronic Engineering, Sichuan University of Arts and Science, Dazhou, 635000, China

    Xiaobo Chen

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  1. Xiaobo Chen
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Chen, X., Yang, P. Preparation and photovoltaic properties of silicon quantum dots embedded in a dielectric matrix: a review. J Mater Sci: Mater Electron 26, 4604–4617 (2015). https://doi.org/10.1007/s10854-015-3147-4

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