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Selective epitaxy growth of Si1−xGex layers for MOSFETs and FinFETs

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Abstract

This article reviews the selective epitaxy growth of intrinsic, B- and C-doped SiGe layers on recessed (or flat) exposed Si areas for MOSFETs as well as on Si-fins for FinFETs. A detailed empirical model for the growth, integration issues including epitaxy quality, selectivity, dopant incorporation, and pattern dependency (or loading effect) is presented.

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  1. School of Information and Communication Technology, Royal Institute of Technology (KTH), Isafjordsg. 22-26, Electrum 229, 16640, Kista, Sweden

    Henry H. Radamson

  2. Thin Film Laboratory, Electrical and Computer Engineering Department, University of Tehran, Tehran, Iran

    Mohammadreza Kolahdouz

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Radamson, H.H., Kolahdouz, M. Selective epitaxy growth of Si1−xGex layers for MOSFETs and FinFETs. J Mater Sci: Mater Electron 26, 4584–4603 (2015). https://doi.org/10.1007/s10854-015-3123-z

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