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Influence of the aggregated Ag3Sn on the improvement of electromigration phenomenon in the doped Sn58Bi solder joints

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Abstract

Electromigration (EM) phenomenon has become more troublesome in the Sn–Bi solder joints as the increase of current density. Doping method is reported as one of the solution to improve solder joints. However, the doped particles are easily aggregated and formed large sized intermetallic compounds (IMCs) in the solder matrix during reflow soldering. In this research, EM phenomenon was studied in the Sn57.6Bi0.4Ag, Sn58Bi with 0.4 wt% Ag doping (Sn58Bi + 0.4Ag) and Sn58Bi solder joints to fully understand the influence of the aggregated Ag3Sn IMCs. The grain refinement effect of the Ag element was found to be the main reason of the improvement of EM phenomenon. Also, it was proved that Sn57.6Bi0.4Ag solder joints with uniformly distributed Ag3Sn IMCs performed well in preventing the segregation of Bi phase. However, Sn58Bi + 0.4Ag solder joints with the aggregated Ag3Sn IMCs did not perform well, forming thicker Bi rich layer at the anode. On the other hand, the addition of Ag element had minimal effect on the formation and consumption of Cu–Sn IMCs in the Sn–Bi solder joints. The thickness of Cu–Sn IMCs layer at the cathode in the Sn57.6Bi0.4Ag and Sn58Bi solder joints were found to be similar. However, the aggregated Ag3Sn IMCs in the Sn58Bi + 0.4Ag solder joints could promote the migration of Cu–Sn IMCs to the cathode.

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References

  1. C.M. Chen, L.T. Chen, Y.S. Lin, J. Electron. Mater. 36, 168 (2007)

    Article  Google Scholar 

  2. K. Murayama, M. Aizawa, M. Higashi, in Proceedings of the Electronic Components & Technology Conference (ECTC) (2014), p. 1166

  3. X. Gu, D. Yang, Y.C. Chan, B.Y. Wu, J. Mater. Res. 23, 2591 (2008)

    Article  Google Scholar 

  4. J.H. Ke, H.Y. Chuang, W.L. Shih, C.R. Kao, Acta Mater. 60, 2082 (2012)

    Article  Google Scholar 

  5. X.F. Zhang, H.Y. Liu, J.D. Guo, J.K. Shang, J. Mater. Sci. Technol. 27, 1072 (2011)

    Article  Google Scholar 

  6. L.T. Chen, C.M. Chen, J. Mater. Res. 21, 962 (2006)

    Article  Google Scholar 

  7. G. Xu, F. Guo, X. Wang, Z. Xia, Y. Lei, Y. Shi, X. Li, J. Alloys Compd. 509, 878 (2011)

    Article  Google Scholar 

  8. I. Shafiq, H.Y. Lau, Y.C. Chan, Microsyst. Technol. 19, 1069 (2013)

    Article  Google Scholar 

  9. X. Hu, Y.C. Chan, K. Zhang, K.C. Yung, J. Alloys Compd. 582, 162 (2013)

    Article  Google Scholar 

  10. S. Xu, Y.C. Chan, K. Zhang, K.C. Yung, J. Alloys Compd. 595, 92 (2014)

    Article  Google Scholar 

  11. S.L. Soo, Instrumentation for Fluid Particle Flow (Noyes Publications, Park Ridge, 1999), pp. 375–377

    Google Scholar 

  12. H.Y. Sun, Y.C. Chan, in Proceedings of the Electronics System-Integration Technology Conference (ESTC) (2014), p. 6962816

  13. H.Y. Sun, Q.Q. Li, Y.C. Chan, J. Mater. Sci. Mater. Electron. 25, 4380 (2014)

    Article  Google Scholar 

  14. K. Subramanian, Lead-Free Solders: Materials Reliability for Electronics (Wiley, New York, 2012), pp. 129–133

    Book  Google Scholar 

  15. P. Heitjans, J. Kärger, Diffusion in Condensed Matter: Methods, Materials, Models (Springer, Berlin, 2005), pp. 27–28

    Book  Google Scholar 

  16. R.J.D. Tilley, Defect in Solids (Wiley, Hoboken, 2008), pp. 231–235

    Book  Google Scholar 

  17. M. Popovich, A.V. Mezhiba, E.G. Friedman, Power Distribution Networks with On-Chip Decoupling Capacitors (Springer, New York, 2008), pp. 72–75

    Book  Google Scholar 

Download references

Acknowledgments

The authors would like to acknowledge the financial support provided by the National Natural Science Foundation of China/Research Grants Council of Hong Kong (NSFC/RGC), Ref. No. 9054008/N_CityU101/12.

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Correspondence to Huayu Sun.

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Sun, H., Chan, Y.C. & Wu, F. Influence of the aggregated Ag3Sn on the improvement of electromigration phenomenon in the doped Sn58Bi solder joints. J Mater Sci: Mater Electron 26, 5129–5134 (2015). https://doi.org/10.1007/s10854-015-3040-1

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  • DOI: https://doi.org/10.1007/s10854-015-3040-1

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