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Dielectric substrate effect on the temperature-dependent electrical properties of pentacene films

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Abstract

Developing better contacts on dielectrics is one of the main challenges for pentacene-based transistor technology. This study investigates the effect of inorganic dielectrics on the temperature-dependent electronic property of pentacene films. It is found that the carrier mobility in the pentacene film deposited on a SiN x dielectric is higher than that in the pentacene film deposited on a SiO2 dielectric. However, the carrier density does not change substantially. The dependence of the carrier mobility upon temperature indicates the dominance of tunneling (hopping) at low (high) temperatures. The Hall-effect analysis by using the polaron theory revealed that the enhanced carrier mobility is due to the modified spacing between molecules in the pentacene layer.

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Acknowledgments

The authors acknowledge the support of the Ministry of Science and Technology, Taiwan (Contract Nos. 100-2112-M-018-003-MY3 and 103-2112-M-018-003-MY3) in the form of Grants.

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Authors and Affiliations

  1. Institute of Photonics, National Changhua University of Education, Changhua, 500, Taiwan

    Yow-Jon Lin & Hou-Yen Tsao

  2. Graduate Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, 632, Taiwan

    Day-Shan Liu

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  1. Yow-Jon Lin
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  2. Hou-Yen Tsao
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  3. Day-Shan Liu
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Correspondence to Yow-Jon Lin.

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Lin, YJ., Tsao, HY. & Liu, DS. Dielectric substrate effect on the temperature-dependent electrical properties of pentacene films. J Mater Sci: Mater Electron 26, 2579–2583 (2015). https://doi.org/10.1007/s10854-015-2726-8

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  • DOI: https://doi.org/10.1007/s10854-015-2726-8

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