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Dielectric relaxation in Ba(Y1/2Nb1/2)O3–BaTiO3 ceramics

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Abstract

Lead-free (1 − x)Ba(Y1/2Nb1/2)O3–xBaTiO3; (0 ≤ x ≤ 1) ceramics have been synthesized using solid-state reaction method and characterized by X-ray diffraction, scanning electron microscopy, dielectric and impedance studies. The crystal-structure of the compounds is found to be cubic with the space group Pm3m(221) except for BaTiO3 for which it is tetragonal (P4/mmm). Complex impedance spectroscopy analysis indicated the presence of non-Debye type dielectric relaxation in Ba(Y1/2Nb1/2)O3–BaTiO3 system. Compound 0.25Ba(Y1/2Nb1/2)O3–0.75BaTiO3 exhibited a low value of temperature coefficient of capacitance (<±8 %) in the working temperature range (up to +100 °C), room temperature dielectric constant equal to 295 and low loss tangent (0.039) which meets the specifications for “Z5F” of Class I dielectrics of Electronic Industries Association. Hence, this composition might be a suitable candidate for capacitor applications. Ac conductivity and electric modulus studies supported the hopping type of conduction in the system and frequency dependent ac conductivity data obeyed Jonscher’s power law.

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Acknowledgments

The present work was supported by ER & IPR Division of Defense Research and Development Organization, New Delhi.

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Author notes

  1. K. Prasad

    Present address: Aryabhatta Centre for Nanoscience and Nanotechnology, Aryabhatta Knowledge University, Patna, 800 001, India

Authors and Affiliations

  1. University Department of Physics, T.M. Bhagalpur University, Bhagalpur, 812007, India

    K. Prasad,  Priyanka & K. AmarNath

  2. Department of Physics, S.M. College, Bhagalpur, 812001, India

    K. P. Chandra

  3. Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology, Mumbai, 400076, India

    A. R. Kulkarni

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  1. K. Prasad
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Correspondence to K. Prasad.

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Prasad, K., Priyanka, AmarNath, K. et al. Dielectric relaxation in Ba(Y1/2Nb1/2)O3–BaTiO3 ceramics. J Mater Sci: Mater Electron 25, 4856–4866 (2014). https://doi.org/10.1007/s10854-014-2244-0

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