Abstract
We reported a new method to investigate the phases and structures of thin film bottom parts. The films were polished by flapping papers to reach the bottoms. The surfaces and cross sections of thin films were observed by Scanning Electron Microscopy. Grazing Incidence X-ray Diffraction, Raman spectra and X-ray Photoelectron Spectroscopy (XPS) were used to investigate the phases, structures and chemical components of the surfaces and bottoms of thin films. By this method, we studied the growth processes of chalcopyrite films after the selenization at various temperatures from 270 to 600 °C. At 270 °C, a great amount of Cu–Se nodules formed at the surface, while (In,Ga)–Se stayed in the bottom. At 380 °C, a double layer structure was observed in the film. The top part was typical CuInSe2 polycrystalline, while the bottom part contained complicated components, like CuInSe2, Cu(In,Ga)3Se5, (In,Ga)Se. At 600 °C, a single layer was formed, which was composed of Cu(In,Ga)Se2 phase. However, a higher Ga/(In+Ga) ratio was obtained towards the back contact. In addition, XPS indicated that the Mo/Cu(In,Ga)Se2 interface was rich in Ga and Se.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
T. Nakada, Electron. Mater. Lett. 8, 179–185 (2012)
J. Kaneshiro et al., Sol. Energy Mat. Sol. Cells 94, 12–16 (2010)
F. Roux et al., Sol. Energy Mat. Sol. Cells 115, 86–92 (2013)
P. Jackson et al., Prog. Photovolt Res. Appl. 19, 894–897 (2011)
H. Wang et al., Semicond. Sci. Technol. 25, 055007 (2010)
J. Liu, A.-X. Wei et al., J. Mater. Sci. Mater. Electron. 24, 2553–2557 (2013)
Y.C. Lin, C.H. Shen et al., J. Mater. Sci. Mater. Electron. 24, 2906–2912 (2013)
M. Park et al., J. Alloys Compd. 513, 68–74 (2012)
N.D. Sang et al., Bull. Mater. Sci. 36, 735–741 (2013)
T.J. Gillespie et al., Sol. Energy Mat. Sol. Cells 59, 27–34 (1999)
N. Romeo et al., Thin Solid Films 535, 88–91 (2013)
J. Palm et al., Thin Solid Films 451–452, 544–551 (2004)
F.B. Dejene, Curr. Appl. Phys. 10, 36–40 (2010)
B. Li et al., Semicond. Sci. Technol. 27, 065007 (2012)
S. Zulfiqar, E. Yassitepe et al., J. Mater. Sci. Mater. Electron. 24, 3226–3230 (2013)
K.H. Liao et al., J. Alloys Compd. 581, 250–256 (2013)
J. Chantana et al., J. Appl. Phys. 114, 084501 (2013)
W. Liu et al., J. Phys. D Appl. Phys. 42, 125303 (2009)
B. Canava et al., Thin Solid Films 431–432, 289–295 (2003)
J.S. Jang et al., Appl. Surf. Sci. 282, 777–781 (2013)
R. Zhang, et al. J. Appl. Phys. 52, UNSP 092302 (2013)
T. Schulmeyer et al., Thin Solid Films 480–481, 110–117 (2005)
J. Liu et al., Vacuum 102, 26–30 (2014)
G. Bilger et al., Appl. Surf. Sci. 231–232, 804–807 (2004)
A.R. Jeong et al., Mater. Chem. Phys. 134, 1030–1035 (2012)
W. Witte et al., Thin Solid Films 517, 867–869 (2008)
V.I. Roca et al., Thin Solid Films 519, 7300–7303 (2011)
Acknowledgments
The first author acknowledges the financial support of the Beijing Ministerium for the science project under contract No. H030630010120. A significant part of thin film characterization (GIXRD, Raman Spectroscopy and XPS) was performed at Centre for Micro-Characterization at the CNRS-IMN institute.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Han, Jf., Liao, C., Jiang, T. et al. Investigation of chalcopyrite film growth at various temperatures: analyses from top to the bottom of the thin films. J Mater Sci: Mater Electron 25, 2237–2243 (2014). https://doi.org/10.1007/s10854-014-1864-8
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10854-014-1864-8