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Absorption enhancement of near infrared in Te doped nanoporous silicon

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Abstract

In this paper, the optical properties of Te doped nanoporous silicon have been studied. The nanoporous silicon was fabricated by using alkaline etching and electrochemical anodization. The etched nanoporous silicon was injected with Te atoms by ion implantation. These nanostructures formed in electrochemical anodization directly affect the optical properties of nanoporous silicon such as reflectance, transmittance and absorptance. According to the optical measurement, the absorptance of the Te doped nanoporous silicon is over 80 % in the wavelength range from 250 to 1,100 nm. The absorptance of Te doped nanoporous silicon at wavelength longer than 1,100 nm is almost four times of that of untreated silicon, indicating that the ion implantation of Te element increases the NIR absorption of nanoporous silicon considerably.

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Acknowledgments

This work was partially supported by National Science Foundation of China via Grant No. 61101029. The author would like to thank Cong Liu and Peng Li for their help in PECVD and SEM analysis, and State Key Laboratory of Electronic Thin Films and Integrated Devices in China, for the help and equipment support.

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Authors and Affiliations

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, People’s Republic of China

    Yuanjie Su, Peng Zhang, Jing Jiang, Shibin Li, Zhiming Wu & Yadong Jiang

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  1. Yuanjie Su
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  2. Peng Zhang
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  3. Jing Jiang
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  4. Shibin Li
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Correspondence to Shibin Li or Yadong Jiang.

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Su, Y., Zhang, P., Jiang, J. et al. Absorption enhancement of near infrared in Te doped nanoporous silicon. J Mater Sci: Mater Electron 24, 2197–2201 (2013). https://doi.org/10.1007/s10854-013-1079-4

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  • DOI: https://doi.org/10.1007/s10854-013-1079-4

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