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Investigation of the ZnSxSe1-x thin films prepared by chemical bath deposition

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Abstract

The ZnSxSe1−x thin films were prepared by chemical bath deposition technique on glass substrates. The composition ‘x’ was varied from 0 to 1 by changing the concentration of thiourea and sodium selenosulphate in the precursors. The morphology, structural and optical properties of the ZnSxSe1−x thin films were characterized by energy dispersive spectrometer, scanning electron microscopy, X-ray diffraction and UV-Vis spectrophotometer. The results reveal that the ZnSxSe1−x films are cubic zinc blende structure for x = 0, 0.19, 0.25, and amorphous for x = 0.75, 1. The optical band gap of the ZnSxSe1−x films increase from 2.88 to 3.76 eV when the value of ‘x’ increases from 0 to 1. The growth mechanism of the ZnSxSe1–x films was discussed.

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Acknowledgments

We gratefully acknowledge the financial support of the Guangdong Province and the Ministry of Education Cooperation Projects (Grant No. 2011A090200003) and the Projects from the Science and Technology Department of Guangzhou City (Grant No. 12C52111614).

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  1. School of Material and Energy, Guangdong University of Technology, Guangzhou, 510006, China

    Jun Liu, Ai Xiang Wei, Mi Xue Zhuang & Yu Zhao

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  1. Jun Liu
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  2. Ai Xiang Wei
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  3. Mi Xue Zhuang
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Correspondence to Ai Xiang Wei.

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Liu, J., Wei, A.X., Zhuang, M.X. et al. Investigation of the ZnSxSe1-x thin films prepared by chemical bath deposition. J Mater Sci: Mater Electron 24, 1348–1353 (2013). https://doi.org/10.1007/s10854-012-0932-1

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  • DOI: https://doi.org/10.1007/s10854-012-0932-1

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