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Dielectric properties of sol–gel synthesized SrTiO3/(Ba0.7Sr0.3)TiO3 and SrTiO3/Ba(Zr0.3Ti0.7)O3 thin film heterostructures

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Abstract

The paper presents synthesis of Ba0.7Sr0.3TiO3 (BST), BaZr0.3Ti0.7O3 (BZT) and SrTiO3 (ST) thin films and their heterostructures using modified Pechini method. The La0.7Sr0.3MnO3 has been used as a conducting bottom layer to form metal ferroelectric metal capacitor. The thin films are spin coated on SiO2/n-Si(100) substrates. The thin films thus deposited are characterized for crystal structure, morphology, dielectric, complex impedance and admittance properties. Deposition of surface layer ST is observed to reduce loss tangent tan δ of BST and BZT thin films, still maintaining equivalent magnitude of figure of merit γ. The results on dielectric properties are analyzed in terms of the Maxwell–Wagner model and Koop’s phenomenological theory.

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Authors and Affiliations

  1. School of Physical Sciences, Solapur University, Solapur, Maharashtra, India

    A. N. Tarale, M. M. Sutar, D. J. Salunkhe & P. B. Joshi

  2. Department of Physics, Institute of Science, Mumbai, Maharashtra, India

    S. B. Kulkarni

  3. Division of Materials and Chemical Engineering, Hanyang University, Ansan, 426-791, South Korea

    R. C. Pawar

  4. UGC-DAE-CSR, Indore, Madhya Pradesh, India

    D. M. Phase, M. Gupta & R. J. Chaudhary

  5. Department of Materials Engineering, Hanyang University, Ansan, 426-791, South Korea

    C. S. Lee

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  1. A. N. Tarale
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  2. M. M. Sutar
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  4. P. B. Joshi
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  5. S. B. Kulkarni
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  7. C. S. Lee
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Correspondence to P. B. Joshi.

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Tarale, A.N., Sutar, M.M., Salunkhe, D.J. et al. Dielectric properties of sol–gel synthesized SrTiO3/(Ba0.7Sr0.3)TiO3 and SrTiO3/Ba(Zr0.3Ti0.7)O3 thin film heterostructures. J Mater Sci: Mater Electron 24, 1308–1318 (2013). https://doi.org/10.1007/s10854-012-0925-0

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  • DOI: https://doi.org/10.1007/s10854-012-0925-0

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