Abstract
4 wt. % Ga-doped ZnO (GZO) film has been prepared on c (0001)—sapphire (Al2O3) substrate by Pulse Laser Deposition method. The effect of annealing temperature on the microstructural and electrical properties of the GZO thin film was investigated. X-ray diffraction and High-Resolution Transmission electron microscopy (HR–TEM) studies showed that the electrical and defects properties of GZO thin film were greatly influenced by annealing temperature. The crystallinity and electrical properties of the film can be improved by annealing at 800 °C. However, at a too high annealing temperature of 1,000 °C, the newly processing defects such as extended dislocations and a new nanoscale stacking fault were formed. Consequently, the crystallinity and electrical properties of the film annealed at 1,000 °C were degraded. The study was useful to acquire optimal annealing conditions to improve the properties of film.
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References
H. Kato, M. Sano, K. Miyamoto, T. Yao, J. Cryst. Growth 237, 538 (2002)
J.K. Sheu, Y.S. Lu, M.L. Lee, W.C. Lai, C.H. Kuo, C.J. Tun, Appl. Phys. Lett. 90, 263511 (2007)
X. Bie, J.G. Lu, L. Gong, L. Lin, B.H. Zhao, Z.Z. Ye, Appl. Surf. Sci. 256, 289 (2009)
P. Pant, J.D. Budai, R. Aggarwal, R.J. Narayan, J. Narayan, Acta Mater. 57, 4426 (2009)
P. Pant, J.D. Budai, J. Narayan, Acta Mater. 58, 1097 (2010)
J.H. Lee, Y.Y. Kim, H.K. Cho, J.Y. Lee, J. Cryst. Growth 311, 4641 (2009)
N. Setter, R. Waser, Acta Mater. 48, 151 (2000)
Q.B. Ma, Z.Z. Ye, H.P. He et al., J. Cryst. Growth 304, 64 (2007)
D. Gerthsen, D. Litvinov, T. Gruber, C. Kirchner, A. Waag, Appl. Phys. Lett. 81, 3972 (2002)
S.K. Han, J.H. Kim, S.K. Hong et al., J. Cryst. Growth 312, 2196 (2010)
S.R. Aghdaee, V. Soleimanian, J. Cryst. Growth 312, 3050 (2010)
B.D. Ahn, S.H. Oh, C.H. Lee, G.H. Kim, H.J. Kim, S.Y. Lee, J. Cryst. Growth 309, 128 (2007)
S.Y. Kuo, W.C. Chen, F.I. Lai et al., J. Cryst. Growth 287, 78 (2006)
B.Y. Oh, M.C. Jeong, D.S. Kim, W. Lee, J.M. Myoung, J. Cryst. Growth 281, 475 (2005)
T. Yamada, H. Makino, N. Yamamoto, T. Yamamoto, J. Appl. Phys. 107, 123534 (2010)
Y.J. Park, H.N. Kim, H.H. Shin, Appl. Surf. Sci. 255, 7532 (2009)
J.W. Shin, J.Y. Lee, Y.S. No, T.W. Kim, W.K. Choi, J. Appl. Phys. 100, 013526 (2006)
Y.F. Yan, G.M. Dalpian, M.M. Al-Jassim, S.H. Wei, Phys. Rev. B Condens. Matter Mater. Phys. 70, 193206 (2004)
J.H. Kim, B.D. Ahn, C.H. Lee, K.A. Jeon, H.S. Kang, S.Y. Lee, J. Appl. Phys. 100, 113515 (2006)
Acknowledgments
The authors would like to thank Prof. Shengwu Guo for the HRTEM measurements and Qing Zhou for his experimental support.
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Zhang, Z., Bao, C., Li, Q. et al. Effect of annealing temperature on the microstructural and electrical properties of epitaxial Ga-doped ZnO film deposited on c-sapphire substrate. J Mater Sci: Mater Electron 23, 376–383 (2012). https://doi.org/10.1007/s10854-011-0420-z
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DOI: https://doi.org/10.1007/s10854-011-0420-z