Skip to main content
SpringerLink
Log in

Effect of annealing temperature on electrical and nano-structural properties of sol–gel derived ZnO thin films

  • Published:
Journal of Materials Science: Materials in Electronics Aims and scope Submit manuscript

Abstract

Zinc oxide (ZnO) thin films have been prepared on silicon substrates by sol–gel spin coating technique with spinning speed of 3,000 rpm. The films were annealed at different temperatures from 200 to 500 °C and found that ZnO films exhibit different nanostructures at different annealing temperatures. The X-ray diffraction (XRD) results showed that the ZnO films convert from amorphous to polycrystalline phase after annealing at 400 °C. The metal oxide semiconductor (MOS) capacitors were fabricated using ZnO films deposited on pre-cleaned silicon (100) substrates and electrical properties such as current versus voltage (I–V) and capacitance versus voltage (C–V) characteristics were studied. The electrical resistivity decreased with increasing annealing temperature. The oxide capacitance was measured at different annealing temperatures and different signal frequencies. The dielectric constant and the loss factor (tanδ) were increased with increase of annealing temperature.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6

Similar content being viewed by others

References

  1. K. Yoshino, T. Hata, T. Kakeno, H. Komaki, M. Yoneta, Y. Akaki, T. Ikari, Phys. Status Solidi (c) 2, 626 (2003)

    Article  Google Scholar 

  2. V. Musat, E. Fortunato, S. Petrescu, A.M. Botelho do Rego, Phys Status Solidi (a) 205, 2075 (2008)

    Article  CAS  Google Scholar 

  3. D. Xue, J. Zhang, C. Yang, T. Wang, J. Lumin. 128, 685 (2008)

    Article  CAS  Google Scholar 

  4. C. Li, Z. Du, H. Yu, T. Wang, Thin Solid Films 517, 5931 (2009)

    Article  CAS  Google Scholar 

  5. P. Bhattacharyya, P.K. Basu, B. Mondal, H. Saha, Microelectron. Reliab. 48, 1772 (2008)

    Article  CAS  Google Scholar 

  6. E. Chikoidze, M. Nolan, M. Modreanu, V. Sallet, P. Galtier, Thin Solid Films 516, 8146 (2008)

    Article  CAS  Google Scholar 

  7. A.K.K. Kyaw, X.W. Sun, C.Y. Jiang, J. Sol-Gel. Sci. Technol. 52, 348 (2009)

    Article  CAS  Google Scholar 

  8. U.N. Maiti, P.K. Ghosh, S.F. Ahmed, M.K. Mitra, K.K. Chattopadhyay, J. Sol-Gel Sci. Technol. 41, 87 (2007)

    Article  CAS  Google Scholar 

  9. R. Kaur, A.V. Singh, R.M. Mehra, Physica Status Solidi (a) 202, 1053 (2005)

    Article  CAS  Google Scholar 

  10. X.-H. Wang, J. Shi, S. Dai, Y. Yang, Thin Solid Films 429, 102 (2003)

    Article  CAS  Google Scholar 

  11. D. Yuvaraj, K. Narasimha Rao, Vacuum 82, 1274 (2008)

    Article  CAS  Google Scholar 

  12. H.-C. Cheng, C.-F. Chen, C.-Y. Tsay, Appl. Phys. Lett. 90, 012113 (2007)

    Article  Google Scholar 

  13. B. Sun, H. Sirringhaus, Nano. Lett. 5, 2408 (2005)

    Article  CAS  Google Scholar 

  14. A. Drici, G. Djeteli, G. Tchangbedji, H. Derouiche, K. Jondo, K. Napo, J.C. Bernède, S. Ouro-Djobo, M. Gbagba, Phys. Stat. Sol. (a) 201, 1528 (2004)

    Article  CAS  Google Scholar 

  15. H.K. Kim, M. Mathur, Mat. Res. Soc. Symp. Proc. 238, 317 (1992)

    Article  CAS  Google Scholar 

  16. T. Okamura, Y. Seki, S. Nagakari, H. Okushi, Jpn. J. Appl. Phys. 31, L762 (1992)

    Article  CAS  Google Scholar 

  17. M. Ristov, G.I. Sinadinovski, I. Grozdanov, M. Mitreski, Thin Solid Films 149, 65 (1987)

    Article  CAS  Google Scholar 

Download references

Acknowledgments

This work was performed using facilities at the Centre of Excellence for Nanoelectronics (CEN) at the Indian Institute of Science, Bangalore, under the Indian Nanoelectronics Users Programme (INUP), funded by the Department of Information Technology (DIT), Government of India. The authors are very grateful to Coordinator, INUP, CEN, IISc, Bangalore, India. MV is thankful to central facility, Department of Physics, IISc for providing XRD data for samples.

Author information

Author notes

  1. R. P. S. Chakradhar

    Present address: CSIR-NAL, Bangalore, 560017, India

Authors and Affiliations

  1. Department of Physics, Govt. Science College, Bangalore, 560001, India

    M. Vishwas

  2. Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore, 560012, India

    K. Narasimha Rao

  3. Nano-Research for Advanced Materials Technologies, Bangalore, 560040, India

    A. R. Phani

  4. Department of Physics, Govt. College for Women, Mandya, 571401, India

    K. V. Arjuna Gowda

Authors
  1. M. Vishwas
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. K. Narasimha Rao
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. R. Phani
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. K. V. Arjuna Gowda
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. R. P. S. Chakradhar
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding authors

Correspondence to M. Vishwas or R. P. S. Chakradhar.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Vishwas, M., Narasimha Rao, K., Phani, A.R. et al. Effect of annealing temperature on electrical and nano-structural properties of sol–gel derived ZnO thin films. J Mater Sci: Mater Electron 22, 1415–1419 (2011). https://doi.org/10.1007/s10854-011-0323-z

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10854-011-0323-z

Keywords

Search

Navigation