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Effects of hydrogen annealing on the structural, optical and electrical properties of indium-doped zinc oxide films

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Abstract

Indium-doped zinc oxide (IZO) films were fabricated by radio-frequency magnetron sputtering. The effects of hydrogen annealing on the structural, optical and electrical properties of the IZO films were investigated. The hydrogen annealing may deteriorate the crystallinity of the films. The surfaces of the films would be damaged when the annealing temperature was higher than 350 °C. After the annealing, the surface roughness of the films would decrease, and high transparency of 80–90% in the visible and near-infrared wavelength would be kept. Meanwhile, the resistivity decreased from 1.25 × 10−3 Ωcm of the deposited films to 6.70 × 10−4 Ωcm of the annealed films. The work function of the IZO films may be modulated between 4.6 and 4.98 eV by varying the hydrogen annealing temperature and duration.

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Acknowledgments

We would like to acknowledge the National Basic Research Program (Grant No. 2007CB936700), Key Program of Sci. & Tech. in Fujian Province (No. 2009H0045, 2009I0028), and the National Natural Science Foundation of China (Grant No 90922027).

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Authors and Affiliations

  1. School of Materials Science and Engineering, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, 100083, Beijing, People’s Republic of China

    Changgang Huang & Quanlin Liu

  2. Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 350002, Fuzhou, Fujian, People’s Republic of China

    Changgang Huang, Meili Wang, Zhonghua Deng, Yongge Cao, Zhi Huang, Yuan Liu, Wang Guo & Qiufeng Huang

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  1. Changgang Huang
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  2. Meili Wang
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Correspondence to Yongge Cao or Quanlin Liu.

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Huang, C., Wang, M., Deng, Z. et al. Effects of hydrogen annealing on the structural, optical and electrical properties of indium-doped zinc oxide films. J Mater Sci: Mater Electron 21, 1221–1227 (2010). https://doi.org/10.1007/s10854-009-0050-x

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  • DOI: https://doi.org/10.1007/s10854-009-0050-x

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