Abstract
An Au-rich, eutectic Au/Sn alloy was fabricated by sequential electroplating of Au and Sn, and reflowing the as-deposited Au/Sn/Au triple-layer film at 320–350 °C. Microstructures and phase compositions for the as-deposited Au/Sn/Au triple-layer film and the reflowed Au-rich, eutectic Au/Sn alloys were studied. Two Si wafers, each with the Au-rich, eutectic Au/Sn alloy solder, were bonded together. For the deposited Au/Sn/Au triple-layer film, reaction between Au and Sn occurs at room temperature leading to the formation of AuSn and AuSn4. After reflowing at 320 °C, two phases remain, AuSn and Au5Sn, with the AuSn particles distributed randomly in the Au5Sn matrix. There are also some micropores and microcracks in the reflowed alloy. If the annealing temperature is increased to 350 °C, the Au/Sn alloy is denser and contains fewer micropores. However, microcracks remain, forming preferentially along the Au5Sn/AuSn interface. After reflowing at 320 °C under a pressure of 13 kPa, two Si wafers are joined using the Au-rich, eutectic Au/Sn alloy solder. The solder is in intimate contact with the Si wafers; however, there are some micropores within the solder. After reflowing at 350 °C, the bond is quite good, without microcracks or micropores at the Si wafer/solder interface or within the solder.
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Acknowledgments
The authors wish to thank the Natural Sciences and Engineering Research Council (NSERC) of Canada and Micralyne Inc. for providing research funding and Si substrates for electroplating (Micralyne). The first author would also like to thank the China Scholarship Council (CSC) and Hefei University of Technology, China, for financial support for studying abroad, as well as graduate students Weifeng Wei, Chunfen Han, Nima Shaigan and Sarah Zhou for their helpful discussion and cooperation.
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Tang, W., He, A., Liu, Q. et al. Fabrication and microstructures of sequentially electroplated Au-rich, eutectic Au/Sn alloy solder. J Mater Sci: Mater Electron 19, 1176–1183 (2008). https://doi.org/10.1007/s10854-007-9522-z
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DOI: https://doi.org/10.1007/s10854-007-9522-z