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Deep UV light emitting diodes grown by gas source molecular beam epitaxy

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Abstract

We report the structural, electrical, and optical properties of deep UV light emitting diodes (LEDs) grown by gas source molecular beam epitaxy with ammonia on sapphire and AlN/sapphire template substrates. AlN/sapphire substrates were grown by stress controlled hydride vapor phase epitaxy (HVPE). LEDs based on n- and p-type AlN/AlxGa1−xN (0.05 ≤ x ≤ 0.08) superlattices are demonstrated operating to wavelengths as short as 250 nm. We report a significant enhancement in the cathodoluminescence intensities (by factor of ∼100) and photoluminescence lifetimes in the AlxGa1−xN/AlyGa1−yN superlattices consisting of well material grown in the three dimensional mode. We interpret these observations in terms of formation of quantum well/quantum dot active regions.

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Acknowledgments

TTU team acknowledges support from NSF (ECS-0304224 and ECS-0609416), THECB-ARP-003644-0014-2006, and the J. F Maddox Foundation. We acknowledge A. Chandolu for X-ray measurements.

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Authors and Affiliations

  1. Nano Tech Center, Texas Tech University, Lubbock, TX, 79409, USA

    Sergey Nikishin, Boris Borisov, Vladimir Kuryatkov & Mark Holtz

  2. U.S. Army Research Laboratory, AMSRD-ARL-SE-EM, Adelphi, MD, 20783, USA

    Gregory A. Garrett, Wendy L. Sarney, Anand V. Sampath, Hongen Shen & Michael Wraback

  3. TDI, Inc., 12214 Plum Orchard Dr., Silver Spring, MD, 20904, USA

    Alexander Usikov & Vladimir Dmitriev

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  1. Sergey Nikishin
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  2. Boris Borisov
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  3. Vladimir Kuryatkov
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Correspondence to Sergey Nikishin.

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Nikishin, S., Borisov, B., Kuryatkov, V. et al. Deep UV light emitting diodes grown by gas source molecular beam epitaxy. J Mater Sci: Mater Electron 19, 764–769 (2008). https://doi.org/10.1007/s10854-007-9405-3

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  • DOI: https://doi.org/10.1007/s10854-007-9405-3

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