Skip to main content
SpringerLink
Log in

Formation rate of vacancy–oxygen complexes in heat-treated Czochralski grown silicon under gamma-irradiation

  • Published:
Journal of Materials Science: Materials in Electronics Aims and scope Submit manuscript

Abstract

The formation processes of A-centers in Czochralski grown silicon subjected to heat treatment at various temperatures and subsequent 60Co gamma-irradiation at room temperature are investigated in some detail. The absolute cross-sections of these processes are determined by the presence of one or several competing channels of vacancy trapping by oxygen and other structural defects in heat-treated materials. It is shown that this cross-section can be used for monitoring the effective trapping channels in Cz-Si after short heat treatment when electron microscopy appears to be little or not informative.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5

Similar content being viewed by others

References

  1. H.J. Stein, (1971) in Radiation Effects in Semiconductors. ed. by J.W. Corbett, G.D. Watkins (Gordon and Breach Science Publishers, London-New York-Paris), p. 125

    Google Scholar 

  2. L.C. Kimerling, M.T. Asom, J.L. Benton, P.J. Drevinsky, C.E. Caefer, in Materials Science Forum. (Trans Tech Publications, Switzerland), vol. 38–41, p. 141 (1989)

    Google Scholar 

  3. A. Borghesi, B. Pivac, A. Sassella, A. Stella, J. Appl. Phys. 77, 4169 (1995)

    Article  CAS  Google Scholar 

  4. V.V. Emtsev, B.A. Andreev, V.V. Emtsev Jr., G.A. Oganesyan, D.I. Kryzhkov, A. Misiuk, C.A. Londos, M.S. Potsidi, Solid State Phenomena. (Trans Tech Publications, Switzerland) vol. 108–109, p. 181 (2005)

    Google Scholar 

  5. Yu.N. Daluda, V.V. Emtsev, P.D. Kervalishvili, V.I. Petrov, K. Schmalz, Fiz. Tekh. Poluprovodn. 21, (1987) 1283 [Semiconductors (AIP) 21 (1987) 778]

  6. Yu.N. Daluda, V.V. Emtsev, P. Gaworzewski, T.V. Mashovets, K. Schmalz, Radiat. Eff. 89, 173 (1985)

    Google Scholar 

  7. V.V. Emtsev, V.A. Khramtsov, K. Schmalz, Phys. Stat. Sol. (a) 120, K15 (1990)

    Article  CAS  Google Scholar 

  8. K. Schmalz, K. Tittelbach, V.V. Emtsev, Yu.N. Daluda, Phys. Stat. Sol. (a) 116, K37 (1989)

  9. K. Tempelhoff, F. Spiegelberg, R. Gleichmann, D. Wruck, Phys. Stat. Sol. (a) 56, 213 (1979)

    Article  CAS  Google Scholar 

  10. W. Bergholz, P. Pirouz, J.L. Hutchison, in Proceedings of the Thirteenth International Conference on Defects in Semiconductor, ed. by L.C. Kimerling, J.M. Parsey, Jr. (The Metallurgical Society of AIME, 1985), p. 717

Download references

Acknowledgement

The work was partly supported by Contract No 506962 (FP6-2002-IST-1) and by Grant of Federal Agency of Science and Innovations “Scientific School—5920.2006.2”.

Author information

Authors and Affiliations

  1. Solid State Electronics, Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ulitsa, 26, St. Petersburg, 194021, Russia

    V. V. Emtsev, V. V. Emtsev Jr & G. A. Oganesyan

Authors
  1. V. V. Emtsev
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. V. V. Emtsev Jr
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. G. A. Oganesyan
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to G. A. Oganesyan.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Emtsev, V.V., Emtsev, V.V. & Oganesyan, G.A. Formation rate of vacancy–oxygen complexes in heat-treated Czochralski grown silicon under gamma-irradiation. J Mater Sci: Mater Electron 18, 701–704 (2007). https://doi.org/10.1007/s10854-006-9109-0

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10854-006-9109-0

Keywords

Search

Navigation