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Ultra-low-κ HFPDB-based periodic mesoporous organosilica film with high mechanical strength for interlayer dielectric

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Abstract

A novel bridged organosilane precursor with star-shaped construction, [hexfluoropropane-2,2-diyl)dibenzyl-bridged organosilane (HFPDBO)], is prepared by facile organic synthesis method. The resultant HFPDBO precursor is mixed with porogen and acid catalyst to prepare periodic mesoporous organosilica (PMO) thin film via evaporation-induced self-assembly after spin-coating procedure. All the as-prepared HFPDB-based PMO thin film has been characterized by Fourier transform infrared spectroscopy, nuclear magnetic resonance spectrum, scanning electron microscopy, transmission electron microscope, and small-angle X-ray diffraction, respectively. Thereinto, the HFPDB-based PMO thin film with weight ratio of porogen to precursor (0.75:1) possesses excellent dielectric property (1.58@1 MHz of dielectric constants), high mechanical property (5.54 ± 0.11 GPa of Young’s modulus) and hydrophobic property (90.1° of water contact angle) simultaneously. These low dielectric constant, high mechanical strength, and the hydrophobicity suggest potential application of the HFPDB-based PMO thin films as low-k materials in microelectronics.

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Acknowledgements

This work was financially supported by National Natural Science Foundation of China (Grant No. 21201175), Guangdong and Shenzhen Innovative Research Team Program (No. 2011D052, KYPT20121228160843692), and R&D Funds for basic Research Program of Shenzhen (Grant No. JCYJ20120615140007998, JCYJ20150401145529012).

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Authors and Affiliations

  1. Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, China

    Jiawei Zhang, Guoping Zhang, Yongju Gao & Rong Sun

  2. Nano Science and Technology Institute, University of Science and Technology of China, Suzhou, China

    Jiawei Zhang & Yongju Gao

  3. School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, GA, 30332, USA

    C. P. Wong

  4. Faculty of Engineering, The Chinese University of Hong Kong, Shatin, 999077, Hong Kong, China

    C. P. Wong

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  1. Jiawei Zhang
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  2. Guoping Zhang
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  3. Yongju Gao
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  4. Rong Sun
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  5. C. P. Wong
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Corresponding authors

Correspondence to Guoping Zhang or Rong Sun.

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Zhang, J., Zhang, G., Gao, Y. et al. Ultra-low-κ HFPDB-based periodic mesoporous organosilica film with high mechanical strength for interlayer dielectric. J Mater Sci 51, 7966–7976 (2016). https://doi.org/10.1007/s10853-016-0066-6

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  • DOI: https://doi.org/10.1007/s10853-016-0066-6

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