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Magnetic and electrical properties of Ti-substituted lanthanum bismuth manganites

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Abstract

We are reporting the influence of non-magnetic Ti ions on magnetic, electrical, magneto-transport, and dielectric responses in polycrystalline ferromagnetic insulating samples \( {\text{La}}_{ 0. 4} {\text{Bi}}_{ 0. 6} {\text{Mn}}_{{ 1 { - }x}} {\text{Ti}}_{x} {\text{O}}_{ 3} \) (x = 0.05 and 0.10) synthesized by solid-state route method. Powder X-ray diffraction analysis reveals that the samples crystallize in tetragonal structure indexed to I4/mcm space group. Scanning electron micrographs suggest that the increase in Ti substitution inhibits grain growth process leading to decrease in grain size. The characteristic magnetic dilution with increase in x is evident due to the non-magnetic nature of the Ti ions. Also, in magnetization curve, the observed glassy behavior restricts the long-range magnetic spin interactions in the broader temperatures range. The electrical resistivity measurements exhibited semiconducting nature throughout the measured temperature range (110–300 K) without metal-semiconductor phase transition. The magneto-transport behavior in the paramagnetic region (for T > 150 K) follows \( \left[ {{\text{MR}}\sim \frac{\Delta \rho }{{\rho \left( {0T} \right)}}} \right] \propto H^{n} \) relation, giving possible correlation between electrical and magnetic properties. Resistivity data at low temperature region suggest that the conduction is due to the hopping of charge carrier, satisfying SE-VRH mechanism. However, the resistivity data at high-temperature regime suggest the localization of small polarons. The large dielectric responses achieved with multiple relaxations are understood due to extrinsic and intrinsic properties. Complex impedance spectrums have been analyzed using equivalent circuits to determine different contributions responsible for the relaxation process with Ti substitution.

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Acknowledgements

This work is supported by Department of Atomic Energy-Board of Research of Nuclear Sciences (DAE-BRNS), Govt. of India under DAE-Young Scientist research Award to VD via Project sanction No: 2011/20/37P/01/BRNS. PKV is indebted to DAE-BRNS for SRF fellowship. RH, DCJ, and authors acknowledge Barbara and James Palmer Endowment at the Department of Electrical and Computer Engineering, Iowa State University, USA for SEM and magnetization measurements. Authors are grateful to Dr. V. Ganesan, Center director, UGC-DAE Consortium for Scientific Research, Indore for the experimental facilities and extended support. We concede Dr. R Rawat and Mr. Sachin Kumar, UGC-DAE Consortium for Scientific Research, Indore for electrical resistivity/magnetoresistance measurements. RNB and authors thank CIF, Pondicherry University and DAE-BRNS, Govt. of India, for experimental facilities for dielectric measurements. Finally, VD and PKV are thankful to Prof. T. N. Guru Rao, solid state and structural chemistry unit (SSCU), IISC Bangalore for initial help in analyzing XRD measurements.

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Authors and Affiliations

  1. Department of Physics, Maharaja Institute of Technology, Mysore, 571438, Karnataka, India

    V. Punith Kumar & Vijaylakshmi Dayal

  2. Research Center Affiliation, Visvesvaraya Technological University, Belgaum, 590014, Karnataka, India

    V. Punith Kumar & Vijaylakshmi Dayal

  3. Department of Electrical and Computer Engineering, Iowa State University, Ames, IA, 50011, USA

    R. L. Hadimani & D. C. Jiles

  4. Department of Physics, Pondicherry University, Pondicherry, 605014, India

    R. N. Bhowmik

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Punith Kumar, V., Dayal, V., Hadimani, R.L. et al. Magnetic and electrical properties of Ti-substituted lanthanum bismuth manganites. J Mater Sci 50, 3562–3575 (2015). https://doi.org/10.1007/s10853-015-8916-1

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