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Effect of lattice misfit on the transition temperature of VO2 thin film

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Abstract

Vanadium dioxide thin films were deposited on c-cut sapphire and MgO(111) substrate using pulsed laser deposition method to investigate the effect of lattice misfit between the thin film and the substrate on the transition temperature of VO2 thin film. All vanadium dioxide thin films showed heteroepitaxial growth with (002) preferred orientation. VO2/c-sapphire and VO2/MgO(111) had different transition temperatures, regardless of the thickness, orientation, and deposition conditions of the thin film. These results suggest that considering lattice mismatch between thin film and substrate is another promising option for controlling transition temperature of VO2 thin films.

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Acknowledgements

This research was supported by a grant from Construction Technology Innovation Program (CTIP) funded by Ministry of Land, Transport and Maritime Affairs (MLTM) of Korean Government, RIAMI-AC30-11 (0417-20110069).

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Seoul National University, Seoul, 151-744, Korea

    Hyun Koo, Sejin Yoon, O-Jong Kwon, Kyeong-Eun Ko, Dongmin Shin, Sung-Hwan Bae & Chan Park

  2. Korea Electronics Technology Institute, Seongnam-si, Gyeonggi-do, Korea

    Se-Hong Chang

  3. Research Institute of Advanced Materials, Seoul National University, Seoul, Korea

    Chan Park

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  1. Hyun Koo
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  2. Sejin Yoon
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  3. O-Jong Kwon
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Correspondence to Chan Park.

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Koo, H., Yoon, S., Kwon, OJ. et al. Effect of lattice misfit on the transition temperature of VO2 thin film. J Mater Sci 47, 6397–6401 (2012). https://doi.org/10.1007/s10853-012-6565-1

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  • DOI: https://doi.org/10.1007/s10853-012-6565-1

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