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Memory characteristics of Al2O3/LaAlO3/SiO2 multilayer structures with tunnel oxide thickness variation

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Abstract

Charge trap flash (CTF) memory devices are candidates to replace NAND flash devices. In this study, Pt/Al2O3/LaAlO3/SiO2/Si multilayer structures with lanthanum aluminate charge traps were fabricated for nonvolatile memory device applications. An aluminum oxide film was used as a blocking oxide for low power consumption in the program/erase operation and to minimize charge transport through the blocking oxide layer. The thickness of SiO2 as tunnel oxide layer was varied from 30 to 50 Å. Thicknesses of oxide layers were confirmed by high resolution transmission electron microscopy (HRTEM) and all the samples showed amorphous structure. From the C–V measurement, a maximum memory window of 3.4 V was observed when tunnel oxide thickness was 40 Å. In the cycling test for reliability, the 30 Å tunnel oxide sample showed a relatively large memory window reduction by repeated program/erase operations due to the high electric field of ~10 MV/cm through tunnel oxide. The other samples showed less than 10% loss of memory window during 104 cycles.

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Acknowledgement

This work was supported by the Korea Research Foundation Grant funded by the Korean Government (KRF-2008-313-D00448).

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Authors and Affiliations

  1. Department of Advanced Materials Science and Engineering, Yonsei University, 262 Seongsan-no, Seodaemun-gu, Seoul, 120-749, Republic of Korea

    Seung-Yong Cha, Hyo-June Kim & Doo-Jin Choi

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  1. Seung-Yong Cha
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  2. Hyo-June Kim
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  3. Doo-Jin Choi
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Correspondence to Doo-Jin Choi.

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Cha, SY., Kim, HJ. & Choi, DJ. Memory characteristics of Al2O3/LaAlO3/SiO2 multilayer structures with tunnel oxide thickness variation. J Mater Sci 45, 5223–5227 (2010). https://doi.org/10.1007/s10853-010-4562-9

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  • DOI: https://doi.org/10.1007/s10853-010-4562-9

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