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Post-growth annealing and wide bandgap modulation of BeZnO layers grown by RF co-sputtering of ZnO and Be targets

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Abstract

ZnO based oxide system BexZn1−xO alloy of various compositions has been successfully grown by the RF co-sputtering method. The crystallinity of the BexZn1−xO alloys has been remarkably improved after the post-annealing at 600 °C compared with the BexZn1−xO alloys post-annealed at other temperatures. The x value of the BexZn1−xO layers has been increased from 0.022 to 0.17 by adjusting the RF-power of the Be target. Also, the optical bandgap energy has been modulated from 3.2218 to 3.7978 eV, respectively. Based on our results, a bandgap bowing parameter of BexZn1−xO alloy has been extracted out to be 4.5 eV. These findings could be useful to fabricate the ZnO/BexZn1−xO quantum structures and bandgap modulation for deep ultraviolet-light-emitting diodes.

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Acknowledgement

This work was supported by the Korea Research Foundation Grant funded by the Korean Government (KRF-2008-005-J00302).

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Authors and Affiliations

  1. Semiconductor Physics Research Center (SPRC), School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju, 561-756, South Korea

    J. H. Yu, D. S. Park, J. H. Kim, T. S. Jeong & C. J. Youn

  2. Department of Physics, Chosun University, Gwangju, 501-759, South Korea

    K. J. Hong

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  1. J. H. Yu
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  2. D. S. Park
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  3. J. H. Kim
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  4. T. S. Jeong
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  5. C. J. Youn
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  6. K. J. Hong
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Correspondence to C. J. Youn.

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Yu, J.H., Park, D.S., Kim, J.H. et al. Post-growth annealing and wide bandgap modulation of BeZnO layers grown by RF co-sputtering of ZnO and Be targets. J Mater Sci 45, 130–135 (2010). https://doi.org/10.1007/s10853-009-3902-0

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  • DOI: https://doi.org/10.1007/s10853-009-3902-0

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