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Interface effects on highly epitaxial ferroelectric thin films

  • Ferroelectrics
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Abstract

Interface effects have been found to play a key role in controlling the epitaxial nature and physical properties on the highly epitaxial ferroelectric thin films. Thin film ferroelectrics are dominantly affected by the strains induced by lattice misfits between the films and the substrates, surface step terrace, both step height and terrace dimension, and the surface terminations. The natures of interface induced local strain formations, edge dislocations, and antiphase domain boundaries are reviewed in this article.

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Acknowledgements

The authors gratefully acknowledge the support of the National Science Foundation, the Department of Energy, the Army Research Office, the Texas Higher Education ARP Program, and the State of Texas through the TcSUH at University of Houston.

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Authors and Affiliations

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, Chengdu, Sichuan, 610054, People’s Republic of China

    Y. Lin

  2. Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, TX, 78249, USA

    C. L. Chen

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Lin, Y., Chen, C.L. Interface effects on highly epitaxial ferroelectric thin films. J Mater Sci 44, 5274–5287 (2009). https://doi.org/10.1007/s10853-009-3664-8

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