Abstract
Reproducible and stable p-type ZnO thin films have been prepared by the N–Al codoping method. Secondary ion mass spectroscopy measurements demonstrate that N and Al are incorporated into ZnO. The resistivity, carrier concentration, and Hall mobility are typically of 50–100 Ωcm, 1×1017–8×1017 cm−3, and 0.1–0.6 cm2/Vs, respectively, for the N–Al codoped p-type ZnO films. Hall measurement, X-ray diffraction, and optical transmission were carried out to investigate the changes of the properties with the storage period. Results show that the p-type characteristics of the N–Al codoped ZnO films are of acceptable reproducibility and stability. In addition, the N–Al codoped p-type ZnO films have good crystallinity and optical quality. The properties are time independent.
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Lu, J.G., Zhu, L.P., Ye, Z.Z. et al. Reproducibility and stability of N–Al codoped p-type ZnO thin films. J Mater Sci 41, 467–470 (2006). https://doi.org/10.1007/s10853-005-2279-y
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DOI: https://doi.org/10.1007/s10853-005-2279-y