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Low Temperature Sintering of BaTi4O9-Based Middle-k Dielectric Composition for LTCC Applications

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Abstract

Effect of glass addition on the low-temperature sintering and microwave dielectric properties of BaTi4O9-based ceramics were studied to develop the middle-k dielectric composition for the functional substrate of low-temperature co-fired ceramics. When 10 wt% of glass was added, sufficient densification was obtained and the relative density more than 98% was reached at the sintering temperature of 875C. The microwave dielectric properties were k = 32, Q × f = 9000 GHz, and tcf = 10 ppm/C. As the added amount of glass frit with base dielectric composition, phase changes from BaTi4O9 to BaTi5O11 and Ba4Ti13O30 was observed, which result in the modification of microwave dielectric properties.

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Correspondence to Jae-Gwan Park.

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Choi, YJ., Park, JH., Ko, WJ. et al. Low Temperature Sintering of BaTi4O9-Based Middle-k Dielectric Composition for LTCC Applications. J Electroceram 14, 157–162 (2005). https://doi.org/10.1007/s10832-005-0880-8

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  • DOI: https://doi.org/10.1007/s10832-005-0880-8

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