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Preparation and Properties of Bi4 − xNd x Ti3O12 Thin Films by Chemical Solution Deposition

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Abstract

Neodymium-modified Bi4Ti3O12, (Bi, Nd)4Ti3O12 (BNT) ferroelectric thin films have been prepared on Pt/TiO x /SiO2/Si substrates using metal-organic precursor solutions by the chemical solution deposition method. The BNT precursor films crystallized into the Bi layered perovskite Bi4Ti3O12 (BIT) as a single-phase above 600∘C. The synthesized BNT films revealed a random orientation having a strong 117 reflection, whereas non-substituted BIT thin films exhibited a random orientation with strong 00l diffractions. Among Bi4 − xNd x Ti3O12 [x = 0.0, 0.5, 0.75, 1.0] thin films, Bi3.25Nd0.75Ti3O12 thin films showed a well-saturated P-E hysteresis loop with the highest Pr (22 μ C/cm2) and a low Ec (69 kV/cm) at an applied voltage of 5 V. The Nd-substitution with the optimum amount for the Bi site in the BIT structure was effective not only for promoting the 117 preferred orientation but also for improving the microstructure and ferroelectric properties of the resultant films.

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Authors and Affiliations

  1. Center for Integrated Research in Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan

    Wataru Sakamoto, Yu-Ki Mizutani & Toshinobu Yogo

  2. Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan

    Mio Yamada, Koichi Kikuta & Shin-Ichi Hirano

  3. Department of Materials Science and Engineering, Shonan Institute of Technology 1-1-25 Tsujido-Nishikaigan, Fujisawa, Kanagawa, 251-8511, Japan

    Naoya Iizawa, Daichi Togawa & Takashi Hayashi

Authors
  1. Wataru Sakamoto
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  2. Mio Yamada
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  3. Naoya Iizawa
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  4. Yu-Ki Mizutani
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  5. Daichi Togawa
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  6. Koichi Kikuta
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  7. Toshinobu Yogo
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  8. Takashi Hayashi
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  9. Shin-Ichi Hirano
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Sakamoto, W., Yamada, M., Iizawa, N. et al. Preparation and Properties of Bi4 − xNd x Ti3O12 Thin Films by Chemical Solution Deposition. J Electroceram 13, 339–343 (2004). https://doi.org/10.1007/s10832-004-5123-x

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  • DOI: https://doi.org/10.1007/s10832-004-5123-x

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