Microwave Dielectric Properties of Ferroelectric BaTiO₃ Thin Film

Abstract

The dielectric properties of c-axis epitaxial BaTiO₃ thin film on LaAlO₃ are investigated at frequencies of 0.5–30 GHz. For the measurements, interdigital capacitors with the Au/Ti electrode configurations of five fingers pairs that are 15 μm wide and spaced 2 μm apart are prepared by photolithography and lift-off patterning. Finger length varies from 20 to 80 μm. The capacitance of epitaxial BaTiO₃ films exhibited no frequency dependence up to 10 GHz with the exception of slightly upward tendency of capacitance in BaTiO₃ film with a finger length of 80 μm due to the self resonant frequency at 20 GHz. The Q-factors of the capacitors, defined as Q = 1/ωCR, are decreased up to 10 GHz with increased frequency. At 10 GHz, the BaTiO₃ film has a tunability [defined as k(V) = [C(0)−C(V)]C(0)] of 1.5% at 15 V, a loss tangent of ≤ 0.2 at room temperature. The small tunability can be interpreted as a result of in-plane compressive stress of BaTiO₃ film exhibiting large dielectric anisotropy. For the improvement of tunability and dielectric loss in the interdigital BaTiO₃ capacitor, the tetragonality (c/a) of epitaxial BaTiO₃ film and design of interdigital capacitor should be modified.